Sputtering target and its production method
A manufacturing method and technology for sputtering targets, applied in the field of sputtering targets, can solve the problems of environmental pollution, easy occurrence of film defects, film defects, etc., and achieve the effect of reducing abnormal discharge
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Embodiment 1
[0049] Metal Ni (electrolytic nickel, purity: 99.99 wt%), metal W (purity: 99.99 wt%), and metal Al (Al bare metal, purity: 99% or higher) were weighed in a total weight of about 30 kg so that The composition is W, 15 wt%; Al, 2 wt%; and the balance is Ni.
[0050] Mix various raw materials to obtain the above composition, use a high-frequency vacuum melting furnace to melt the composition under vacuum conditions, use a mold for casting, and then perform hot forging and hot rolling under vacuum and 1100°C until the thickness of the plate is 8mm, and then heat-treated under vacuum and 750°C. Afterwards, turning and plane polishing were carried out, and then the material was cut into a sheet with a diameter of 152 mm and a thickness of 5 mm, which was welded to a steel backing plate by a metal welding method to obtain a sputtering target with the above composition. Surface polishing was carried out using a grinding stone with a #60 grain size, 6-8 μm grinding depth, and 25 m / mi...
Embodiment 2
[0058] In order to investigate the effect of surface roughness, when performing surface polishing, a sputtering target was fabricated in the same manner as in Example 1, but polished with a grindstone with #40 grain size, 15 μm grinding depth and 25 m / min grinding speed , the obtained target surface roughness Ra was 12 μm. In addition, sputtering and film production were also performed in the same manner as in Example 1. The number of particles in the obtained film was measured in the same manner as in Example 1. Also, the contact angle between the obtained film and the photoresist was measured in the same manner as in Example 1.
[0059] The oxygen content, average particle size and surface roughness Ra of the obtained targets, as well as the measurement results of the number of particles with a particle size of 3 μm or more in the film obtained by sputtering are listed in Table 1. In addition, the measurement results of the contact angle between the obtained film and the p...
Embodiment 3
[0062] Metal Ni is replaced by high-purity Ni (99.995 wt%, oxygen content 0.001% or less), and metal Al is replaced by high-purity Al (purity 99.999 wt%, oxygen content 0.002% or less), except that The sputtering target was manufactured according to the method of Example 1 except that the raw material was changed to a raw material with low oxygen content. In addition, sputtering and film production were also performed in the same manner as in Example 1, and the number of particles in the obtained film was measured in the same manner as in Example 1. Also, the contact angle between the obtained film and the photoresist was measured in the same manner as in Example 1.
[0063] The oxygen content, average particle size and surface roughness Ra of the obtained target, and the number of particles with a particle size greater than or equal to 3 μm in the film obtained by sputtering are listed in Table 1. In addition, the measurement results of the contact angle between the obtained...
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Abstract
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