Sputtering target material and sputtering device

Abstract

The invention discloses a sputtering target material, comprising a plurality of first sub-blocks and a plurality of second sub-blocks, wherein the plurality of first sub-blocks and the plurality of second sub-blocks are distributed in a plurality of rows and columns; the first sub-blocks and the second sub-blocks in each row are distributed in a staggered manner; and the first sub-blocks and the second sub-blocks in each column are also distributed in the staggered manner. A sputtering device comprising the sputtering target material is also disclosed by the invention; the sputtering device comprises an alternating current power supply; the alternating current power supply comprises a first electrode and a second electrode, of which the polarities are opposite; each first sub-block of the sputtering target material is correspondingly connected with the first electrode of the alternating current power supply; and each second sub-block of the sputtering target material is correspondingly connected to the second electrode of the alternating current power supply. The sputtering target material is designed into blocks, so that the target material is fully utilized, and a product membrane has good uniformity.

Description

technical field [0001] The invention relates to the technical field of sputtering processing, in particular to a sputtering target and a sputtering device. Background technique [0002] In the TFT-LCD array manufacturing process, as the size of the glass substrate continues to increase, the current AC mode (AC mode) sputtering equipment has become the mainstream equipment for magnetron sputtering, and its advantages are less abnormal discharge and better film formation. Good uniformity. figure 1 Shown is a schematic diagram of the target material used in the TFT-LCD manufacturing process in the prior art. It can be seen that the entire target material is evenly divided into a plurality of strip-shaped blocks 110 parallel to each other. The AC voltage of the AC power supply 130 is connected between each strip block 110 , so that the anode and cathode can be freely switched between each strip block 110 . When such a target is used for coating, the distribution of the lateral...

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Problems solved by technology

When such a target is used for coating, the distribution of the lateral plasma 120 generated in the chamber of the sputtering equipment is as follows: figure 2 As shown, the plasma 120 is in an inverted U-shaped distribution with concentrated distribution in the middle of the width direction of the strip block 110 and less edge distribution, and the uniformity of the distribution of the plasma 120 is relatively poor.

In this way, after a period of use, the target material in the middle of the strip-shaped block 110 intensively impacted by the plasma 120 is seriously consumed, while the target material in the edge position of the strip-shaped block is less consumed, forming a pattern such as image 3 The waste area shown makes the utilization rate of the target material low and causes serious waste; similarly, the labor cost required for frequent material replacement cannot be ignored

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