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Blazed grating external cavity semiconductor laser and collimating method thereof

A blazed grating and laser technology, which is applied to the device for controlling the output parameters of the laser, the structure of the optical resonator, etc., can solve the problems of complex manufacturing, low wavelength adjustment accuracy, low mechanical stability, etc., and achieve the effect of high-precision tuning.

Inactive Publication Date: 2010-06-02
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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AI Technical Summary

Problems solved by technology

[0005] However, due to the addition of external moving parts, its manufacture is more complicated, the volume is relatively large, the mechanical stability is not high, the wavelength adjustment accuracy is not high, the adjustment speed is relatively slow, and the tuning range is limited.

Method used

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  • Blazed grating external cavity semiconductor laser and collimating method thereof
  • Blazed grating external cavity semiconductor laser and collimating method thereof
  • Blazed grating external cavity semiconductor laser and collimating method thereof

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Embodiment Construction

[0033] see figure 1 As shown, the present invention provides a blazed grating external cavity semiconductor laser, comprising:

[0034] A laser 1, the laser 1 is a semiconductor laser with single-ended output;

[0035] A self-focusing lens 2, the self-focusing lens 2 is located on the optical path of the laser 1;

[0036] A piezoelectric ceramic 4, the piezoelectric ceramic 4 is located on the optical path of the laser 1 behind the self-focusing lens 2, an optical fiber 3 is wound on the surface of the piezoelectric ceramic 4, the core diameter of the optical fiber 3 is greater than 50 microns, and the length is greater than 30 mm;

[0037] A collimating lens 5, which is located on the optical path of the laser 1 behind the piezoelectric ceramic 4;

[0038] The output end of the optical fiber 3 is at the object focal point of the aspheric collimator lens;

[0039] A blazed grating 6, the blazed grating 6 is located at a predetermined angle on the optical path of the laser ...

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Abstract

The invention provides a blazed grating external cavity semiconductor laser, comprising a laser, a self-focusing lens arranged on a light path of the laser, a piezoelectric ceramics which is arranged on the light path of the laser behind the self-focusing lens and is wound with optical fibers on the surface thereof, a collimating lens arranged on the light path of the laser behind the piezoelectric ceramics, a blazed grating arranged on the light path of the laser behind the collimating lens in a preset angle and a control module connected with the optical fibers on the piezoelectric ceramics.

Description

technical field [0001] The invention relates to the tuning field of a blazed grating external cavity semiconductor laser, in particular to a blazed grating external cavity semiconductor laser with fast tuning speed and a large tuning range and an alignment method thereof. Background technique [0002] Traditional light sources in the field of optical communication are based on fixed-wavelength laser modules, and fixed-wavelength lasers are assigned to each wavelength channel, which not only needs to package multiple lasers, but also greatly increases the cost of optical communication networks and limits the expansion of optical networks , and network flexibility. The introduction of tunable lasers can not only effectively reduce the cost of optical communication networks, save wavelength division multiplexing (WDM) system converters, but also reduce the number of lasers and modules, so that the functions of the well optical network can expand network flexibility and control ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/14H01S5/06
Inventor 何春九曾华林何军周燕
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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