Unlock instant, AI-driven research and patent intelligence for your innovation.

Reflective surface plasma imaging and photo-etching method for processing nano graph with high depth-to-width ratio

A surface plasmon and nano-patterning technology, applied in the field of nano-processing, can solve the problems of low contrast ratio, poor pattern aspect ratio, shallow photoresist pattern depth, etc., and achieve the effect of improving the contrast ratio of imaging lithography

Active Publication Date: 2010-06-09
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
View PDF0 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is: aiming at the problems of shallow photoresist pattern depth, small pattern contrast and poor pattern aspect ratio in the existing surface plasmon imaging lithography technology, to provide a nano-pattern with high aspect ratio Processed reflective surface plasmon imaging lithography three-layer glue structure substrate and preparation method, reflective surface plasmon imaging lithography nano pattern mask and reflective surface plasmon imaging for high aspect ratio nano pattern processing Photolithography method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Reflective surface plasma imaging and photo-etching method for processing nano graph with high depth-to-width ratio
  • Reflective surface plasma imaging and photo-etching method for processing nano graph with high depth-to-width ratio
  • Reflective surface plasma imaging and photo-etching method for processing nano graph with high depth-to-width ratio

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] A typical embodiment of the present invention is to manufacture a periodic line structure with a line width of 200nm and a period of 400nm on a quartz substrate, a nano photoresist pattern with a depth of 300nm, and an exposure wavelength of 365nm.

[0034] The steps to make the graph are as follows: figure 1 As shown, the specific implementation is as follows:

[0035] (1) The photoresist AR3120 is spin-coated on the surface of the quartz substrate at a speed of 3000 rpm, and the thickness of the photoresist film is 400nm;

[0036] (2) The substrate is re-placed in the oven and baked for 2 hours at a temperature of 130 degrees, so that the photoresist of the substrate loses its UV-sensitive properties;

[0037] (3) Utilize the magnetron sputtering coating equipment to sputter a layer of metal silver film on the photoresist surface, with a thickness of 50nm;

[0038](4) Spin-coat the photoresist AR3170 on the surface of the metal silver film at a speed of 4000 rpm to ...

Embodiment 2

[0046] A typical embodiment of the present invention is to manufacture a periodic line structure with a line width of 20nm and a period of 40nm on a silicon substrate, a nano-photoresist pattern with a depth of 100nm, and an exposure wavelength of 365nm.

[0047] The steps to make the graph are as follows: figure 1 As shown, the specific implementation is as follows:

[0048] (1) The photoresist AR3120 is spin-coated on the surface of the silicon substrate at a speed of 5000 rpm, and the thickness of the photoresist film is 100nm;

[0049] (2) The substrate is re-placed in the oven and baked for 2 hours at a temperature of 120 degrees, so that the photoresist of the substrate loses its UV-sensitive properties;

[0050] (3) Using magnetron sputtering coating equipment, sputter a layer of metallic silver film on the surface of the photoresist, with a thickness of 30nm;

[0051] (4) Spin-coat the photoresist AR3170 on the surface of the metal silver film at a speed of 5000 rpm ...

Embodiment 3

[0059] A typical embodiment of the present invention is to manufacture a periodic line structure with a line width of 500nm and a period of 1000nm on a germanium substrate, a nano photoresist pattern with a depth of 500nm, and an exposure wavelength of 365nm.

[0060] The steps to make the graph are as follows: figure 1 As shown, the specific implementation is as follows:

[0061] (1) The photoresist AR3120 is spin-coated on the surface of the germanium substrate at a speed of 3000 rpm, and the thickness of the photoresist film is 500nm;

[0062] (2) The substrate is re-placed in an oven, baked for 3 hours at a temperature of 150 degrees, so that the photoresist of the substrate loses its UV-sensitive properties;

[0063] (3) Utilize the magnetron sputtering coating equipment, sputter one layer of metal silver film layer on the photoresist surface, thickness 100nm;

[0064] (4) Spin-coat the photoresist AR3170 on the surface of the metal silver film at a speed of 3000 rpm to...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a reflective surface plasma imaging and photo-etching method for processing a nano graph with a high depth-to-width ratio. A photoresist-silver membrane-photoresist three-layer membrane structural substrate is adopted, and contact exposure is carried out on a nano mask figure surface and substrate surface layer photoresist. The silver film is used for imaging a graph with a line width scale of 20 to 500 nm on a chromium membrane via ultraviolet illuminating light onto the substrate surface layer photoresist. After the substrate surface layer photoresist is exposed and developed, the image is transferred to the metal silver membrane and a bottom photoresist layer by two etching steps so as to realize a nano photoresist graph with the high depth-to-width ratio.

Description

technical field [0001] The invention belongs to the technical field of nano-processing, and relates to a three-layer glue structure substrate and a preparation method for reflective surface plasmon imaging lithography for processing high-aspect-ratio nano-patterns, and a reflective-type substrate for high-aspect-ratio nano-pattern processing. Nano pattern mask for surface plasmon imaging lithography and reflective surface plasmon imaging lithography method. technical background [0002] In order to meet the continuous pursuit of smaller line width of integrated circuits, various new nanofabrication technologies have been continuously explored and researched. Compared with commercial lithography equipment (such as 193nm immersion lithography equipment), surface plasmon super-resolution imaging lithography has the advantages of high resolution (up to 50nm), low cost, and high efficiency, so it has attracted extensive attention from researchers ( N. Fang, H. Lee, C. Sun and X....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/095G03F1/00G03F7/00
Inventor 罗先刚王长涛冯沁邢卉潘丽刘尧方亮刘玲
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI