A reflective surface plasmon imaging lithography method for high aspect ratio nanopatterning
A surface plasmon and nano-patterning technology, applied in the field of nano-processing, can solve the problems of low contrast ratio, poor pattern aspect ratio, shallow photoresist pattern depth, etc., and achieve the effect of improving the contrast ratio of imaging lithography
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Embodiment 1
[0033] A typical embodiment of the present invention is to manufacture a periodic line structure with a line width of 200nm and a period of 400nm on a quartz substrate, a nano photoresist pattern with a depth of 300nm, and an exposure wavelength of 365nm.
[0034] The steps to make the graph are as follows: figure 1 As shown, the specific implementation is as follows:
[0035] (1) The photoresist AR3120 is spin-coated on the surface of the quartz substrate at a speed of 3000 rpm, and the thickness of the photoresist film is 400nm;
[0036] (2) The substrate is re-placed in the oven and baked for 2 hours at a temperature of 130 degrees, so that the photoresist of the substrate loses its UV-sensitive properties;
[0037] (3) Utilize the magnetron sputtering coating equipment to sputter a layer of metal silver film on the photoresist surface, with a thickness of 50nm;
[0038](4) Spin-coat the photoresist AR3170 on the surface of the metal silver film at a speed of 4000 rpm to ...
Embodiment 2
[0046] A typical embodiment of the present invention is to manufacture a periodic line structure with a line width of 20nm and a period of 40nm on a silicon substrate, a nano-photoresist pattern with a depth of 100nm, and an exposure wavelength of 365nm.
[0047] The steps to make the graph are as follows: figure 1 As shown, the specific implementation is as follows:
[0048] (1) The photoresist AR3120 is spin-coated on the surface of the silicon substrate at a speed of 5000 rpm, and the thickness of the photoresist film is 100nm;
[0049] (2) The substrate is re-placed in the oven and baked for 2 hours at a temperature of 120 degrees, so that the photoresist of the substrate loses its UV-sensitive properties;
[0050] (3) Using magnetron sputtering coating equipment, sputter a layer of metallic silver film on the surface of the photoresist, with a thickness of 30nm;
[0051] (4) Spin-coat the photoresist AR3170 on the surface of the metal silver film at a speed of 5000 rpm ...
Embodiment 3
[0059] A typical embodiment of the present invention is to manufacture a periodic line structure with a line width of 500nm and a period of 1000nm on a germanium substrate, a nano photoresist pattern with a depth of 500nm, and an exposure wavelength of 365nm.
[0060] The steps to make the graph are as follows: figure 1 As shown, the specific implementation is as follows:
[0061] (1) The photoresist AR3120 is spin-coated on the surface of the germanium substrate at a speed of 3000 rpm, and the thickness of the photoresist film is 500nm;
[0062] (2) The substrate is re-placed in an oven, baked for 3 hours at a temperature of 150 degrees, so that the photoresist of the substrate loses its UV-sensitive properties;
[0063] (3) Utilize the magnetron sputtering coating equipment, sputter one layer of metal silver film layer on the photoresist surface, thickness 100nm;
[0064] (4) Spin-coat the photoresist AR3170 on the surface of the metal silver film at a speed of 3000 rpm to...
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Abstract
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