Dry-method film coating process

Abstract

The invention provides a dry-method film coating process used in a process for photoetching a silicon wafer. The process comprises the following steps of: coating a layer of bonding agent on the surface of the silicon wafer to form a bonding agent layer and heating and drying the bonding agent layer; coating a dry film on the surface of the silicon wafer and pressing the film in a dry coating machine; and transferring the silicon wafer, on which the film is coated, to a curing furnace for hardening the film. In the process of the invention, a thinner bonding layer is added in the common dry-method pressing film coating process, so that after the film is hardened, the bonding agent is compactly filled between the dry film and the silicon wafer, and the coating compactness of the dry film is improved; and the dry film formed by the process has the characteristics of firm support, high coating compactness and high reliability.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, in particular to the photolithographic film-attaching technology of wafers, and in particular to a dry film-attaching process. Background technique [0002] In semiconductor production and manufacturing, the photolithography process sometimes needs to cover the surface of the wafer with a photoresist film, which is divided into wet film and dry film. When the required photoresist is thicker, the thickness reaches 30um~ 120um, the more widely used method is the dry rolling film sticking process. [0003] The rolling and laminating has to be done by rolling a certain thickness of dry film photoresist to the surface of the wafer at one time through the rollers of the film laminating machine under certain environmental conditions. The tightness between the dry film obtained by this method and the surface of the wafer depends on the performance of the film mounter and various envi...

AI Technical Summary

Problems solved by technology

Because the photoresist film plays a role in blocking the growth of metal on the non-opening surface during the electroplating process, the photoresist film needs to be thicker and must be closely attached to the wafer, otherwise the electroplating solution enters between the photoresist film and the metal seed layer The gap 4 will cause missing plating in the gap, destroy the surface consistency, and cause the product to be scrapped and invalid

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