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CuxO-based resistor type storage and preparation method thereof

A resistance memory and resistance type technology, applied in the field of microelectronics, can solve the problems of thermal stress coefficient difference, device reliability, yield and storage characteristics, voids at the interface, etc., to achieve low power consumption, ensure yield and The effect of reliability and high resistance

Inactive Publication Date: 2014-09-03
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, during the preparation of CuxO materials, due to the difference in thermal stress coefficient between Cu and CuxO materials, it is easy to generate voids at the interface, and the formed CuxO materials are relatively loose, which greatly affects the reliability, yield and storage characteristics of devices. big impact

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  • CuxO-based resistor type storage and preparation method thereof
  • CuxO-based resistor type storage and preparation method thereof
  • CuxO-based resistor type storage and preparation method thereof

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Embodiment Construction

[0053] The invention is described more fully hereinafter in reference to the examples illustrated in the illustrations, providing preferred embodiments but should not be considered limited to the embodiments set forth herein. In the drawings, the thicknesses of layers and regions are exaggerated for clarity, but as schematic diagrams, they should not be considered as strictly reflecting the proportional relationship of geometric dimensions.

[0054] The drawings referenced herein are schematic illustrations of idealized embodiments of the invention, and the illustrated embodiments of the invention should not be considered limited to the particular shapes of the regions shown in the drawings, but include resulting shapes, such as manufacturing-induced deviation. For example, the curves obtained by dry etching usually have curved or rounded characteristics, but in the illustrations of the embodiments of the present invention, they are all represented by rectangles, and the repre...

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Abstract

The invention relates to a CuxO-based resistor type storage and a preparation method thereof in the technical field of metallic oxide non-volatile storages. The CuxO-based resistor type storage comprises an upper electrode, a copper lower electrode and a CuxO-based storage medium arranged between the upper electrode and the copper lower electrode, wherein the CuxO-based storage medium is formed by oxidating a CuSi compound buffer layer covering the copper lower electrode, wherein x is larger than 1 but is not larger than 2. The resistor type storage can prevent cavities being generated below the storage medium, thereby ensuring the yield and the reliability of the device; and meanwhile, the resistor type storage has the characteristic of relatively low power.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to the metal oxide non-volatile memory technology, in particular to a resistive memory including a CuxO-based storage medium and a manufacturing method thereof. Background technique [0002] Memory occupies an important position in the semiconductor market. Due to the continuous popularization of portable electronic devices, the share of non-volatile memory in the entire memory market is also increasing, of which more than 90% of the share is occupied by FLASH. However, due to the requirement of storing charges, the floating gate of FLASH cannot be thinned without limit with the development of technology generation. It is reported that the limit of FLASH technology is around 32nm, which forces people to look for the next generation of non-volatile memory with better performance. Recently, resistive switching memory (resistive switching memory) has attracted high...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00H01L27/24H01L21/82
Inventor 林殷茵吕杭炳王明周鹏
Owner FUDAN UNIV