Chemical-mechanical polishing solution
A chemical machinery, polishing liquid technology, applied in the direction of polishing compositions containing abrasives, can solve problems such as scratches, and achieve the effect of improving the degree of depression
Inactive Publication Date: 2010-06-23
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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- Abstract
- Description
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- Application Information
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Problems solved by technology
[0004] The technical problem to be solved by the present invention is to overcome the existing chemical mechanical polishing liquid used for polishing copper, which is easy to cause scratches on the surface of the substrate, contamination and excessive removal of copper blocks to produce depressions, and to provide a A chemical mechanical polishing solution that reduces the sinking of copper blocks after polishing and prevents local and overall corrosion of metallic copper while maintaining a high copper removal rate
Method used
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Embodiment 1～50
[0024] Table 1 provides chemical mechanical polishing liquid 1~50 of the present invention, according to the formula given in the table, make up the mass percentage to 100% with water, mix other components except oxidizing agent homogeneously, use KOH or HNO 3 Adjust to desired pH. Add oxidant before use and mix evenly.
[0025] Table 1 Polishing solution 1-50
[0026]
[0027]
[0028]
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Abstract
The invention discloses chemical-mechanical polishing solution, containing ground particles, complexing agents, oxidants and water. The polishing solution is characterized by also containing one or more block polyether surfactants. The polishing solution can reduce the dents on the polished copper blocks and prevent local and general corrosion of the copper under the condition of keeping higher copper removal rate.
Description
technical field [0001] The invention relates to a chemical mechanical polishing liquid. Background technique [0002] With the development of microelectronics technology, the integration of very large scale integrated circuit chips has reached billions of components, and the feature size has entered the nanometer level, which requires hundreds of processes in the microelectronics process, especially multi-layer wiring, Substrates and media must undergo chemical mechanical planarization. VLSI wiring is being transformed from traditional Al to Cu. Compared with Al, Cu wiring has low resistivity, high electromigration resistance, and short RC delay time. The advantages of Cu wiring have made it replace Al as an interconnect metal in semiconductor manufacturing. [0003] However, there is no known technology for effectively plasma etching or wet etching copper material to fully form copper interconnections in integrated circuits, so chemical mechanical polishing of copper is c...
Claims
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IPC IPC(8): C09G1/02C23F3/04
Inventor 荆建芬蔡鑫元姚颖杨春晓
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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