Chemically mechanical polishing solution and application thereof

Abstract

A chemical-mechanical polishing liquid and the use thereof are provided. The polishing liquid comprises a star polymer containing pigment-affinity group, abrasive particles, a complexing agent, an oxidant and water. While a relatively high removal rate of copper can be kept by applying the polishing liquid, dishing of a polished copper block can be reduced, partial and integral corrosion of the metal copper can be prevented, and the static corrosion rate of copper at room temperature and at polishing temperature can be reduced.

Description

technical field [0001] The invention relates to a chemical mechanical polishing liquid and its application. Background technique [0002] With the development of microelectronics technology, the integration of very large scale integrated circuit chips has reached billions of components, and the feature size has entered the nanometer level, which requires hundreds of processes in the microelectronics process, especially multi-layer wiring, Substrates and media must undergo chemical mechanical planarization. VLSI wiring is being transformed from traditional Al to Cu. Compared with Al, Cu wiring has low resistivity, high electromigration resistance, and short RC delay time. The advantages of Cu wiring have made it replace Al as an interconnect metal in semiconductor manufacturing. [0003] However, there is no known technology for effectively plasma etching or wet etching copper material to fully form copper interconnections in integrated circuits, so chemical mechanical poli...

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to overcome that in the existing chemical mechanical polishing liquid for polishing copper, it is easy to cause scratches on the substrate surface, contamination and excessive removal of copper blocks to produce depressions and copper at room temperature and polishing temperature. The defects with high static corrosion rate provide a way to reduce the depression of copper block after polishing while maintaining a high copper removal rate, prevent local and overall corrosion of metal copper, and reduce copper at room temperature and polishing temperature. Static Etch Rates of Chemical Mechanical Polishing Fluids and Their Applications

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