Novel asymmetric C-band double-mode band-pass filter

An asymmetric and filter technology, applied in the direction of waveguide devices, resonators, electrical components, etc., can solve the problems of high conductor loss and radiation loss, long current path, small power capacity, etc., and achieve convenient use, easy integration, compact design effect

Inactive Publication Date: 2010-06-23
EAST CHINA JIAOTONG UNIVERSITY
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compared with the chip resonant unit, its current path is longer and usually has a smaller area, but it also has the disadvantages of higher conductor loss and radiation loss and smaller power capacity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Novel asymmetric C-band double-mode band-pass filter
  • Novel asymmetric C-band double-mode band-pass filter
  • Novel asymmetric C-band double-mode band-pass filter

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] The asymmetric C-band dual-mode bandpass filter of this embodiment is as attached image 3 As shown, the side length of the pentagonal loop filter (3) in the present embodiment is 5.64mm, which is a full-wavelength resonator; the width of the non-orthogonal input and output feeders (1), (2) is 0.3mm , The coupling gap between the input and output feeder and the resonator is 0.2mm.

[0018] The pentagonal loop filter (3) is connected to the non-orthogonal input and output feeders (1) and (2) through coupling; the tree-shaped fractal perturbation is loaded on the left and right inner corners of the upper side of the ring, and the tree-shaped fractal perturbation is carried out first The two-branch primary fractal (5), on this basis, the secondary fractal is performed to obtain the two-branch secondary fractal structure (6); by adjusting the size of the coupling gap (4) between the input and output feeder and the resonator, it can be adjusted The coupling coefficient of t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a novel asymmetric C-band double-mode band-pass filter, which is formed by coupling an input and an output feeder lines (1) and (2) which are nonorthogonal with two non-adjacent annular edges of a conventional pentagonal annular filter (3), wherein a tree-form fractal perturbed structure is arranged on the inner core of the pentagonal annular resonator (3), and the tree-form fractal perturbation is firstly undertaken the two-branching primary fractal (5) and then is secondarily fractal based on the primary fractal so as to obtain a two-branch secondary-fractal structure (6). On the premise that the circuit area and the processing complexity are free from being increased, the asymmetric C-band double-mode band-pass filter can effectively produce double modes; moreover, the asymmetric C-band double-mode band-pass filter has compact design and easy integration, and is convenient to use in a dense integrated circuit.

Description

technical field [0001] The invention relates to a dual-mode pentagonal ring filter which adopts a novel tree-shaped fractal perturbation structure and belongs to the technical field of electronic devices. Background technique [0002] Microstrip dual-mode resonant units can be divided into two categories: chip type and ring type from the design point of view. The chip structure is usually considered as a resonant cavity with electric walls on the upper and lower bottom and magnetic walls on the edges. Existing reports can roughly distinguish two types, rectangular and triangular, corresponding to different resonance modes. The usual implementation method is to use unequal-length cross grooves along the diagonal direction or introduce a cut corner at one end of the diagonal to achieve perturbation, so as to cause the coupling of orthogonal modes. "Ship Electronic Engineering" 2006 Issue 04 disclosed a new type of triangular dual-mode band-pass filter. The author of the pape...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01P1/20H01P7/08
Inventor 刘海文万晶
Owner EAST CHINA JIAOTONG UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products