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Method for manufacturing semiconductor laser

A semiconductor and laser technology, which is applied in the field of manufacturing ridge-strip semiconductor lasers to achieve the effect of improving ohmic contact characteristics

Inactive Publication Date: 2012-04-11
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Alternatively, dry etching damage occurs in the region of the p-type GaN contact layer 102a near the end face of the ridge bar 103.

Method used

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  • Method for manufacturing semiconductor laser
  • Method for manufacturing semiconductor laser
  • Method for manufacturing semiconductor laser

Examples

Experimental program
Comparison scheme
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no. 1 example

[0055] 1. First Embodiment (Method for Manufacturing Semiconductor Laser)

[0056] 2. Second Embodiment (Method for Manufacturing Semiconductor Laser)

no. 3 example

[0057] 3. Third Embodiment (Method for Manufacturing Semiconductor Laser)

[0058] first embodiment

[0059] (Methods for Manufacturing Semiconductor Lasers)

[0060] A method for manufacturing a GaN-based semiconductor laser according to the first embodiment is described below. The GaN-based semiconductor laser has a ridge-stripe structure, and includes a current non-injection region in the vicinity of both ends of the resonator.

[0061] In the first embodiment, first, as figure 1 As shown, a GaN-based semiconductor layer 12 having a laser structure therein is formed on an n-type GaN substrate 11 by epitaxial growth. The epitaxial growth of the GaN-based semiconductor layer 12 may be performed by, for example, a metal organic chemical vapor deposition (MOCVD) method, but the method is not limited thereto. The top layer of the GaN-based semiconductor layer 12 includes a p-type GaN contact layer.

[0062] In an example of a GaN-based semiconductor laser having an SCH (Se...

no. 2 example

[0089] (Methods for Manufacturing Semiconductor Lasers)

[0090] A method for manufacturing a GaN-based semiconductor laser according to a second embodiment is described below. Although the GaN-based semiconductor laser according to the second embodiment has a ridge stripe structure and a current non-injection structure in the vicinity of the end faces like the GaN-based semiconductor laser according to the first embodiment, the second embodiment is different in that the concave Grooves are not formed on both sides of the ridge bar.

[0091] In the second embodiment, first, the GaN-based semiconductor layer 12 is epitaxially grown on the n-type GaN substrate 11 by the same method as in the first embodiment, and then an insulating layer is formed over the entire plane of the GaN-based semiconductor layer 12. film13. Then, heat treatment is performed in order to electrically activate p-type impurities doped in the p-type layer constituting GaN-based semiconductor layer 12 .

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PUM

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Abstract

A method for manufacturing a semiconductor laser includes the steps of forming a mask layer having a stripe-shaped mask portion corresponding to a ridge stripe to be formed on a nitride-based group III-V compound semiconductor layer, etching the nitride-based group III-V compound semiconductor layer to a predetermined depth using the mask layer to form the ridge stripe, forming a resist to cover the mask layer and the nitride-based group III-V compound semiconductor layer, etching-back the resist until the stripe-shaped mask portion of the mask layer is exposed, removing the exposed mask portion of the mask layer by etching to expose the upper surface of the ridge stripe, forming a metal film on the resist and the exposed ridge stripe to form an electrode on the ridge stripe, removing theresist together with the metal film formed thereon, and removing the mask layer by etching.

Description

technical field [0001] The present invention relates to a method for manufacturing a semiconductor laser, in particular to a method preferably applied to the manufacture of a ridge stripe semiconductor laser having a current non-injection structure near an end face. Background technique [0002] There have been proposed nitride-based semiconductor lasers in which parts near both end faces of the resonator are used as current non-injection regions in order to suppress end face degradation due to COD (Catastrophic Optical Damag, optical catastrophe) accompanying output increase (refer to e.g. Japanese Unexamined Patent Application Publication No. 2005-216990). Figures 28 to 30 A semiconductor laser is shown. [0003] exist Figure 28 In the shown semiconductor laser, a ridge-shaped laser bar serving as a light-emitting portion, that is, a ridge-shaped bar 103 is formed on a nitride semiconductor growth layer 102 grown on an n-type GaN substrate 101 . The top of the ridge st...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/223H01S5/343
CPCH01S5/22H01S5/34333B82Y20/00H01S5/2205H01S5/3013
Inventor 藤本强大桥希美仓本大仲山英次
Owner SONY CORP