MOS (Metal Oxide Semiconductor) formation method and threshold voltage adjustment method thereof
A MOS transistor and threshold voltage technology, which is applied in the manufacturing of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of complex MOS transistor manufacturing process, and achieve the effect of shortening the process cycle, saving costs, and flexibly adjusting
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[0038] Although the present invention will be described in more detail below with reference to the accompanying drawings, which show preferred embodiments of the present invention, it should be understood that those skilled in the art can modify the present invention described herein and still achieve the advantageous effects of the present invention. Therefore, the following description should be understood as a broad teaching for those skilled in the art, and not as a limitation to the present invention.
[0039] In the following paragraphs, the present invention is described in more detail by way of example with reference to the drawings. The advantages and features of the present invention will be clearer according to the following description and claims. It should be noted that the drawings are in a very simplified form and all use imprecise ratios, which are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention.
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