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Harmonic suppression type stub matching network for dual-frequency amplifier

A matching network and harmonic suppression technology, applied in impedance network, multi-terminal pair network, electrical components, etc., can solve the problems of complex structure of discrete component matching network, low applicable frequency band, large size, etc.

Inactive Publication Date: 2010-07-28
BEIJING UNIV OF POSTS & TELECOMM
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The structure of the discrete component matching network is complex, the power capacity is small, the applicable frequency band is low, and it is not suitable for the design and implementation of high-frequency and high-power amplifiers
In addition, a matching network structure based on microstrip lines has appeared, with three transmission lines and two short-circuit stubs, with complex structure and large size

Method used

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  • Harmonic suppression type stub matching network for dual-frequency amplifier
  • Harmonic suppression type stub matching network for dual-frequency amplifier
  • Harmonic suppression type stub matching network for dual-frequency amplifier

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Embodiment Construction

[0014] The embodiments of the present invention will be described in detail below with reference to the accompanying drawings: this embodiment is implemented on the premise of the technical solution of the invention, and provides detailed implementation and specific operation procedures, but the scope of protection of the present invention is not limited to the following Examples.

[0015] Such as figure 2 As shown, this embodiment is an amplifier that can simultaneously work at 3.45 GHz and 5.8 GHz. This amplifier is the maximum gain transmission amplifier. At 3.45GHz frequency, the input load reflection coefficient to be matched is 0.134∠-154.0°, and the output load reflection coefficient is 0.247∠28.3°. At 5.8GHz frequency, the input load reflection coefficient to be matched is 0.255∠-81.6°, and the output load reflection coefficient is 0.325∠-5.9°. The input and output matching circuit of this amplifier is designed according to the present invention, including: dielectric ...

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Abstract

The invention provides a micro-strip line matching network for a dual frequency-band RF (radio frequency) amplifier, which is used for a dual-frequency amplifier in the technical field of wireless communication. The matching network comprises a micro-strip TL (transmission line) 1, a micro-strip TL 2 and an OS (open stub). The invention aims at providing the matching network which is used for the RF amplifier and is suitable for wireless communication, so as not only to lead the amplifier to work on any two frequency bands at the same time, but also to improve the linear performance of the amplifier by utilizing the harmonic suppression of the matching network. The main characteristics of the matching network are as follows: by adopting the TL 1, the TL2 and the OS, the matching network has simple structure and small geometric dimension; by adopting the structure of the OS, the matching network can realize the function of harmonic suppression; in addition, by adopting a micro-strip line, the matching network is suitable for high-power application.

Description

Technical field [0001] The invention relates to a radio frequency amplifier matching design used in the field of wireless communication technology. Background technique [0002] In the transceiver structure of wireless communication, the radio frequency amplifier is an indispensable and important part. Especially for cellular mobile communication systems, power amplifiers occupy a large proportion of the cost and power consumption of mobile communication base stations. Since most wireless communication systems usually work on two or more operating frequencies, it is usually necessary to design multiple sets of circuits to complete the transmission and reception of radio frequency signals. In order to effectively reduce the size of the transceiver and reduce the cost and power consumption of radio frequency front-end equipment, some dual-frequency microwave devices have been designed. These devices can work in two frequency bands at the same time, which can achieve the purpose o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H7/01
Inventor 刘元安刘鑫黎淑兰楼建全于翠屏苏明贺庆武杰吴利辉
Owner BEIJING UNIV OF POSTS & TELECOMM
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