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Sensing amplifier, memory device and sensing method

A sensing amplifier and sensing method technology, applied in static memory, read-only memory, digital memory information and other directions, can solve the problems of noise interference, power supply side noise interference, increase of parasitic capacitance, etc.

Active Publication Date: 2012-10-31
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the number of memory cells on the bit line BL increases, the parasitic capacitance on the bit line BL also increases
Therefore, for the bit line BL, it is easily disturbed by the noise of the power terminal or the ground terminal, such as power / ground bounce (power / ground bounce) problems
The problem of noise interference is significantly worse for ROMs with low operating voltage capabilities

Method used

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  • Sensing amplifier, memory device and sensing method
  • Sensing amplifier, memory device and sensing method
  • Sensing amplifier, memory device and sensing method

Examples

Experimental program
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Embodiment

[0026] Figure 4 is a sense amplifier 400 according to an embodiment of the present invention. The sense amplifier 400 includes a conversion unit 410 , a comparator 420 and a selection unit 430 . When the read-only memory is read, the conversion unit 410 can convert the current I on the bit line of the read-only memory BL Converted to the bit line voltage V BL . Comparator 420 is available for the bit line voltage V BL and the reference voltage V ref compared to produce the output data D out . In this embodiment, when the bit line voltage V BL greater than the reference voltage V ref When, the output data D out for the high voltage level. Conversely, when the reference voltage V ref greater than the bit line voltage V BL When, the output data D out for the low voltage level. The selection unit 430 can be based on the output data D out The negative input terminal of the comparator 420 is coupled to the voltage V L or voltage V H , where the voltage V H greater...

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Abstract

The invention provides a sensing amplifier, a memory device and a sensing method. The sensing amplifier is suitable for a read-only memory (ROM). The sensing amplifier comprises a comparator and a selecting unit, wherein the comparator compares bit line voltage with reference voltage to obtain output data; and the selecting unit selects first voltage or second voltage according to the output datato be used as the reference voltage. The memory device comprising the sensing amplifier and the ROM can reduce the influence of noise interference on the output data of the ROM. In addition, when an initial value of the output data has an error, the memory device can correct the wrong output data into correct output data.

Description

technical field [0001] The present invention relates to a sense amplifier, in particular to a read only memory (ReadOnly Memory, ROM) sense amplifier. Background technique [0002] A read-only memory is a common semiconductor storage device, which is a memory that can only read data. Therefore, once the data is stored in the ROM, it cannot be easily changed or deleted. In general, ROMs are often used in electronic devices or computer systems to avoid loss of stored data due to power off. [0003] figure 1 is a schematic diagram showing a read-only memory. exist figure 1 2, the memory cell M0 and the memory cell M1 are located on the same bit line BL, wherein the memory cell M0 is controlled by the word line WL0, and the memory cell M1 is controlled by the word line WL1. Generally speaking, when reading data from the ROM, it is necessary to detect whether the state of the read memory cell is an open state (as shown by the memory cell M1 ) or a short state (as shown by th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C7/06G11C17/00
Inventor 陈瑞隆陈伟松钟毅勋张家铨
Owner VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION