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3d r/w cell with reduced reverse leakage and method of making thereof

A memory unit and component technology, applied in electrical components, digital memory information, instruments, etc., can solve problems such as difficulty in using chalcogenides

Active Publication Date: 2013-07-24
SANDISK TECH LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Chalcogenides are difficult to work with and can be a challenge for most semiconductor production facilities

Method used

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  • 3d r/w cell with reduced reverse leakage and method of making thereof
  • 3d r/w cell with reduced reverse leakage and method of making thereof
  • 3d r/w cell with reduced reverse leakage and method of making thereof

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Embodiment Construction

[0018] It is known that the resistance of resistors formed from doped polycrystalline silicon or polycrystalline silicon can be trimmed by applying electrical pulses such that they are tuned between stable resistance states. Such trimmable resistors have been used as components in integrated circuits.

[0019] However, using trimmable polysilicon resistors in non-volatile memory cells to store data states is not a conventional approach. There are many difficulties in fabricating memory arrays of polysilicon resistors. If resistors are used as memory cells in a large cross-point array, there will be undesirable leakage in half-selected and unselected cells throughout the array when a voltage is applied to the selected cell. For example, refer to figure 1 , assuming that a voltage is applied between bit line B and word line A to set, reset or sense selected cell S. The desired current flows through the selected cell S. However, some leakage current may flow in alternate path...

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Abstract

A nonvolatile memory device includes a semiconductor diode steering element, and a semiconductor read / write switching element.

Description

[0001] Cross References to Related Patent Applications [0002] This application claims the benefit of US Patent Applications Serial Nos. 11 / 819,895 and 11 / 819,989, filed June 29, 2007, the entire contents of which are incorporated herein by reference. technical field [0003] The present invention relates to non-volatile memory devices and methods of making the same. Background technique [0004] Nonvolatile memory arrays retain their stored data even when power is removed from the device. In a one-time programmable array, each memory cell is formed in an initial unprogrammed state and can be converted to a programmed state. This change is permanent and the unit is not erasable. In other types of memory, memory cells are erasable and can be rewritten multiple times. [0005] Cells can also vary the number of data states each cell can achieve. Data states can be stored by changing some characteristic of the cell that can be detected, such as the current flowing through t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C13/00H01L27/24H01L45/00H10N99/00
CPCG11C13/0002H01L27/24G11C2213/72G11C2213/33H10B63/00G11C11/34
Inventor T·库玛C·J·派提
Owner SANDISK TECH LLC