Etching solution and etching method

Abstract

The invention provides etching solution, which comprises the following components in percentage by weight: 5 to 30 percent of cerium ammonirm nitrate, 10 to 40 percent of phosphoric acid and 2 to 20 percent of nitric acid. The etching solution has little damage to an indium tin oxide electrode when etching an Al-Cr composite metal deposition layer on the surface of the indium tin oxide electrode.

Description

technical field The invention relates to an etching solution and an etching method using the etching solution. Background technique Metal aluminum is often used to form circuits on the surface of indium tin oxide (ITO) substrates due to its good electrical conductivity. However, due to some problems of pure aluminum or aluminum alloy itself, metal chromium or chromium alloy is commonly used together with aluminum or aluminum alloy to form an aluminum and chromium composite metal deposition layer on the surface of ITO, and then etched to form a circuit. For example, due to the low strength of pure aluminum or aluminum alloy, it is easy to be scratched and cause an open circuit when making a circuit, so a layer of protective chromium or chromium alloy is often plated on the aluminum or aluminum alloy deposition layer; in addition, aluminum or aluminum alloy is directly The adhesion is low when it is plated on ITO, so a layer of chromium or chromium alloy is plated under the a...

AI Technical Summary

Problems solved by technology

In order to solve the technical problem that the existing technology cannot simultaneously solve the aluminum and chromium composite metal deposition layer on the surface of indium tin oxide (ITO) to be etched to form a circuit, while the ITO is less damaged, the invention provides an etching solution, Its ingredients, based on its total weight, include:

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