Method for controlling side wall forming

Abstract

The present invention discloses a method for controlling side wall forming, comprising measuring an etching structure before etching, measuring the etched structure after completing the etching; comparing the feature parameters before and after etching to obtain the etching parameters, and controlling the etching parameters in real time. When the etched feature parameter is deviated from the target value, the method for controlling side wall forming of the present invention regulates the etching parameter timely to ensure the stability of the side wall etching, thereby ensuring the isolation effect of the side wall. The method avoids the short connecting of the grid, source and drain to better protect the grid oxygen.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for controlling the formation of sidewalls. Background technique [0002] Figure 1a ~ Figure 1d It is a schematic diagram of the process of forming the existing side wall. [0003] Such as Figure 1a as shown, Figure 1a It is an etching structure before entering an etching machine, including: providing a semiconductor substrate 100, which may be silicon or silicon-on-insulator (SOI). An isolation structure 101 is formed in a semiconductor substrate, and the isolation structure 101 is a shallow trench isolation (STI) structure or a local oxide of silicon (LOCOS) isolation structure. Various well structures and a gate channel layer on the surface of the substrate are also formed in the semiconductor substrate 100 . Generally speaking, the ion-doped conductivity type forming the well structure is the same as the ion-doped conductivity type of the g...

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Problems solved by technology

There is currently no specific control method

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