The invention relates to a device for
semiconductor laser unit Zn
impurity source
diffusion. The device comprises a first
diffusion heating furnace and a second
diffusion heating furnace which are arranged on a track in sequence. The first diffusion
heating furnace is in the shape of a groove with one end sealed. The second diffusion heating furnace is in the shape of a hollow-out ring. The position, at one end of the track, behind the second diffusion heating furnace is provided with a support. The support is provided with a
quartz tube with one end sealed and the other end open. A first
thermocouple and a second
thermocouple are sequentially arranged in the
quartz tube in the longitudinal direction. The front-half portion of a
quartz boat is arranged on the first
thermocouple. The rear-half portion of the quartz boat is arranged on the second thermocouple. According to the device, the separation of a diffusion source and a
chip is adopted, a double-temperature area is adopted to control the temperature of the diffusion source and the temperature of the
chip, and during the diffusion process, the temperature of the diffusion source and the temperature of the
chip are controlled so that the stability of a
furnace temperature can be guaranteed; GaAs on the
surface layer of the chip of a
laser unit is prevented from decomposing in large quantity under the diffusion temperature, so that a high-concentration
surface layer which has the advantages of being bright in surface, even in distribution of the Zn concentration, good in
repeatability, and free of damage is obtained.