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Electrostatic discharge prevention circuit based on complementary SCR (Silicon Controlled Rectifier)

An electrostatic discharge protection and complementary technology, which is applied in the direction of emergency protection circuit devices, emergency protection circuit devices, and circuits for limiting overcurrent/overvoltage, can solve the problems of reducing high-speed circuit performance and large parasitic capacitance, and achieves Reliable electrostatic discharge protection, low trigger voltage, low effect of electrostatic discharge protection

Inactive Publication Date: 2010-09-15
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The invention provides an electrostatic discharge protection circuit based on a complementary SCR, which solves the problem that the traditional complementary SCR parasitic capacitance is large and reduces the performance of high-speed circuits

Method used

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  • Electrostatic discharge prevention circuit based on complementary SCR (Silicon Controlled Rectifier)
  • Electrostatic discharge prevention circuit based on complementary SCR (Silicon Controlled Rectifier)
  • Electrostatic discharge prevention circuit based on complementary SCR (Silicon Controlled Rectifier)

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] Such as image 3 and Figure 4 As shown, an electrostatic discharge protection circuit based on complementary SCR, including:

[0037] A current limiting resistor Rp connected to I / O;

[0038] A PNPNP type bi-directional SCR, such as Figure 9 and Figure 10 As shown, including a P-type substrate 101, an N-type buried layer 102 is provided in the P-type substrate 101, a P well 103 is injected on the N-type buried layer 102, and a layer is injected between the side of the P well 103 and the P-type substrate 101. An annular N-well 104 having the same junction depth as the P-well 103 , the N-well 104 and the N-type buried layer 102 isolate the P-well 102 from the P-type substrate 101 .

[0039] P well 103 is injected with N-type drift region 105a and N-type drift region 105b, N-type drift region 105a is provided with P+ implantation region 107 and N+ implantation region 106, and N-type drift region 105b is provided with P+ implantation region 108 and N+ Implantation r...

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Abstract

The invention discloses an electrostatic discharge prevention circuit based on a complementary SCR (Silicon Controlled Rectifier) for preventing the electrostatic discharge among an input / output end of a core circuit, a positive power line and a negative power line. The electrostatic discharge prevention circuit comprises a power supply clamping unit of which both ends are respectively connected with a positive power line and a negative power line, a PNPNP type bidirection SCR of which both connection terminals are respectively connected with the positive power line and an input / output end of the core circuit, and an NPNPN type bidirection SCR of which both connection terminals are respectively connected with the negative power line and an input / output end of the core circuit. The prevention scheme of the complementary SCR utilizes the power supply clamping unit as an auxiliary trigger unit, can realize the electrostatic discharge prevention of low trigger voltage, and has reliable electrostatic discharge prevention on the internal core circuit.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to an electrostatic discharge protection circuit based on a complementary SCR. Background technique [0002] The electrostatic discharge (ESD) phenomenon in nature is one of the most important reliability problems that cause the failure of integrated circuit products. Relevant research surveys show that 30% of integrated circuit failure products are caused by electrostatic discharge phenomena. Therefore, improving the reliability of electrostatic discharge protection on integrated circuits has a non-negligible effect on improving the yield of integrated circuit products and even driving the entire national economy. [0003] Electrostatic discharge phenomenon is usually divided into three discharge modes according to the source of charge: HBM (Human Body Discharge Model), MM (Machine Discharge Mode), and CDM (Component Charge Discharge Mode). The most common and the two...

Claims

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Application Information

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IPC IPC(8): H02H9/02H01L23/60
Inventor 李明亮董树荣韩雁宋波苗萌马飞
Owner ZHEJIANG UNIV
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