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Method of wafer bonding

A bonding and device technology, which is applied in the manufacturing of electrical components, electric solid-state devices, semiconductor/solid-state devices, etc., can solve the problems of device wafer or carrier wafer damage, contamination of wafer efficiency, etc.

Active Publication Date: 2010-10-06
TAIWAN SEMICON MFG CO LTD
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Problems solved by technology

However, existing methods of wafer bonding can result in damage to the device wafer or carrier wafer, or contaminate the wafer with unwanted particles making the thinning and bonding process less efficient

Method used

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Embodiment Construction

[0008] It is to be appreciated that the following disclosure provides many different embodiments or examples for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are just examples and are not limited thereto. Formation of a first feature above or above a second feature as described in the following description may include both embodiments where the first and second features are in direct contact, or where the first and second features are formed between the first and second features. Embodiments of additional features such that the first and second features may not be in direct contact. Various features are arbitrarily drawn in different scales for simplicity and clarity of illustration.

[0009] figure 1 A flow diagram of a wafer bonding method 100 according to various aspects of the present disclosure is shown. Figures 2A to 2G is based on figure 1...

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Abstract

Provided is a method of fabricating a semiconductor device. The method includes providing a device substrate having a front side, a back side, and a first edge portion, forming a material layer over a portion of the front side of the device substrate, trimming the first edge portion, removing the material layer, bonding the front side of the device substrate to a carrier substrate, thinning the device substrate from the back side, and trimming a second edge portion of the thinned device substrate.

Description

Background technique [0001] In semiconductor technology, image sensors are used to detect the amount of exposed light hitting a semiconductor substrate. Complementary Metal Oxide Semiconductor (CMOS) Image Sensors (CIS) and Charge Coupled Devices (CDD) are widely used in various applications such as digital camera applications. These devices use arrays of pixels, or image sensor elements, including photodiodes and transistors, to harvest light energy to convert images into electrical signals. To enhance light detection efficiency of pixels, image sensors may be fabricated using backside illumination (BSI) technology. BSI technology utilizes a technique called wafer bonding, which involves thinning a device wafer and bonding it to a carrier wafer. Wafer bonding technology can also be used to produce other types of semiconductor devices such as three-dimensional integrated circuits (ICs). However, existing methods of wafer bonding can result in damage to the device wafer or c...

Claims

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Application Information

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IPC IPC(8): H01L27/146H01L21/02
CPCH01L27/1469H01L27/14634H01L21/76256H01L27/1464
Inventor 刘丙寅许家豪喻中一蔡嘉雄
Owner TAIWAN SEMICON MFG CO LTD
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