Semiconductor memory apparatus and refresh control method of the same

Abstract

A semiconductor memory apparatus and a refresh control method are presented. The semiconductor memory apparatus includes a memory cell block composed of a multiplicity of floating body cell (FBC) transistors. Each FBC transistor has a gate connected to a word line, a drain connected to a bit line, and a source connected to a source line. FBC transistor pairs are formed by sharing the source lines in the plurality of the floating body cell transistors. When a refresh signal is enabled, the semiconductor memory apparatus is configured to read data stored in the memory cell block by enabling a refresh read signal and then configured to rewrite the read data in the memory cell block by enabling a refresh write signal.

Description

technical field [0001] The present invention relates to a semiconductor memory device, and more specifically, to a storage unit of the semiconductor memory device and a control circuit thereof. Background technique [0002] A conventional dynamic random access memory (DRAM) includes many memory cells, each of which includes a transistor and a capacitor to store data. However, a general structure having these memory cells is not suitable for reducing the area of ​​a memory core region, so that there is a technical limit in increasing the degree of integration of a semiconductor memory device. Therefore, a floating body cell (FBC, Floating body cell) technology for implementing a transistor and a capacitor of a memory cell as one transistor has been developed. [0003] The FBC technique will be described in more detail below with reference to the accompanying drawings. [0004] figure 1 is a cross-sectional view of a transistor implementing FBC, and illustrates an N-type tr...

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Problems solved by technology

[0013] So far, FBC technology has been difficult to apply to memory cells of semiconductor memory devices because circuits for supplying voltage to the source, drain, and gate of each cell transistor have not been developed

Also, similar to DRAM, the data of semiconductor memory devices employing FBC technology is also volatile

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