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Electronic device and method of manufacturing the same

An electronic device and electrode technology, applied in the direction of microelectronic microstructure devices, microstructure devices, manufacturing microstructure devices, etc., can solve the problems of complex structure, cost preservation, and reduced profile

Active Publication Date: 2010-11-24
FUJITSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since this method requires a second substrate thicker than the first substrate for sealing the functional elements provided on the first substrate, the problem of reduced profile (low profile) is left unsolved
In addition, the electrical loss in the penetrating portion of the wiring of the input and output terminals is not a negligible level, and since the configuration of the input and output terminals becomes complicated, the problem of cost remains

Method used

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  • Electronic device and method of manufacturing the same
  • Electronic device and method of manufacturing the same
  • Electronic device and method of manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0046] First, refer to Figure 1-4 , a description will be given of the MEMS switch 1 according to the first embodiment. Figure 3A , Figure 3B and Figure 3C respectively along the figure 1 A cross-sectional view of switch 1 taken by lines A-A, B-B and C-C in FIG. Figure 4 is along figure 1 A cross-sectional view of the MEMS switch 1 is taken on line A-A shown in . exist figure 2 In , the solder bump 19 and the film member 20 are not shown.

[0047] refer to Figure 1-Figure 3A , MEMS switch 1 is made up of substrate 11, movable contact electrode 12, stationary contact electrode 13, movable driving electrode 14, stationary driving electrode 15, wall part 17, supporting part 18, solder block 19 and film member 20 etc. .

[0048] Substrate 11 is an SOI (Silicon On Insulator) substrate including three layers, namely, support substrate 11a, intermediate oxide film 11b, and active layer 11c. Support substrate 11a is made of silicon and has a thickness of about 500 μm....

no. 2 example

[0097] After that, a description will be given of the MEMS switch 1B according to the second embodiment. In the second embodiment, only those parts that are different from the first embodiment are described. The same parts as those in the first embodiment are assigned the same reference numerals, and descriptions thereof will not be repeated or will be simplified. This also applies to other embodiments.

[0098] Figure 11 is a front view of the MEMS switch 1 according to the second embodiment. exist Figure 11 In , the MEMS switch 1B is shown after omitting the membrane member.

[0099] exist Figure 11 Among them, the support portions 18Ba and 18Bb have opening portions KA which open above the electrode portions 12a and 14a, respectively. In particular, the support portion 18Ba includes support portion segments 18Ba1 and 18Ba2, and the support portion 18Bb includes support portion segments 18Bb1 and 18Bb2. The support portion segment 18Ba1 is connected to the side por...

no. 3 example

[0103] Furthermore, a description will be given of the MEMS switch 1C according to the third embodiment.

[0104] exist Figure 12 Among them, the supporting portion 18Ca is arranged so that it is connected to the anchor portion 12, and the supporting portion 18Cb is arranged so that it is connected to the anchor portion 14b. Therefore, the support portions 18Ca and 18Cb are made in a shape extending from the signal line. With this arrangement, the support portions 18Ca and 18Cb obtain the same potential applied to the movable contact electrode 12 or the movable drive electrode 14 without being connected to the ground potential.

[0105]In the MEMS switch 1C according to the third embodiment, the parasitic capacitances of the electrode portions 12a and 14a are also reduced, and high-frequency characteristics are improved.

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Abstract

An electronic device includes a substrate, a stationary electrode provided above the substrate, a movable electrode that is provided to face the stationary electrode, a wall portion that is provided on the substrate and surrounds the movable electrode and the stationary electrode, a film member that is fixed to the wall portion and seals space including the movable electrode and the stationary electrode, and a support portion that is provided, on an inner side of the wall portion on the substrate, in addition to the movable electrode and the stationary electrode to support the film member from within the space.

Description

technical field [0001] The embodiments discussed here are directed to electronic devices that may be configured as so-called wafer level packages, and methods of making them. Background technique [0002] Conventionally, in response to the miniaturization and high performance needs of high frequency components (RF components) used in mobile phones, high frequency (RF) switches have been developed by using MEMS (Micro Electro Mechanical System) technology. MEMS switches. As its features, MEMS switches have low loss, high insulation, excellent twist characteristics, etc., compared with conventional semiconductor switches. [0003] Figure 29 is a cross-sectional view showing the structure of a conventional MEMS switch 80j, and Figure 30 is a plan view showing the functional part KNj of the MEMS switch 80j. exist Figure 30 In , it should be noted that shading is provided to non-sectional parts to clearly show the shape of each member. [0004] exist Figure 29 and Figu...

Claims

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Application Information

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IPC IPC(8): H01L23/12H01L21/00H01H59/00
CPCB81B2201/014B81C1/00023H01L2924/19041H01L2924/30105H01L24/10B81B7/007H01H59/0009H01L2224/16225H01L2924/16195H01L2924/1461
Inventor 中谷忠司井上广章山田齐上田知史
Owner FUJITSU LTD