Method for cleaning wafer after chemical mechanical polishing

A chemical machinery and wafer cleaning technology, applied in chemical instruments and methods, cleaning methods using tools, cleaning methods using liquids, etc. Stability and other issues to achieve the effect of improving reliability and stability, preventing excessive corrosion, and avoiding pit defects

Inactive Publication Date: 2010-12-08
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology

However, at the end of the actual cleaning process, a large number of pit defects (pit defects) appear on the surface of the wafer, which affects the reliability and stability of the semiconductor device.
[0005] The industry also adopts another wafer cleaning method, that is, instead of using a chemical cleaning solution to clean the chemically mechanically polished wafer, only deionized water is used to rinse the wafer. At this time, pit-like defects will not appear on the wafer surface, but the wafer surface The residues are not completely removed, affecting the cleaning effect

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  • Method for cleaning wafer after chemical mechanical polishing
  • Method for cleaning wafer after chemical mechanical polishing
  • Method for cleaning wafer after chemical mechanical polishing

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Embodiment Construction

[0016] In order to make the purpose and features of the present invention more comprehensible, the specific implementation manners of the present invention will be further described below in conjunction with the accompanying drawings.

[0017] In the field of integrated circuit manufacturing, copper has replaced aluminum to become the mainstream interconnection technology in ultra large scale integrated circuit (Ultra Large Scale Integrated Circuit, USLI) manufacturing. Generally speaking, the copper process dual damascene process usually includes the following steps: first, deposit an insulating layer with a certain thickness on the wafer with semiconductor devices, then etch the insulating layer to form trenches for the damascene process, and then, through electroplating The process fills the trench with metal copper, and finally uses chemical mechanical polishing to planarize the surface of the wafer.

[0018] At present, the industry usually uses a chemical cleaning soluti...

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Abstract

The invention discloses a method for cleaning a wafer after chemical mechanical polishing, comprising the following steps: providing a wafer after chemical mechanical polishing; and cleaning the wafer by using a chemical cleaning solution, wherein the concentration of the chemical cleaning solution is 0.4-0.8%. The method in the invention can effectively avoid the wafer surface from occurring pit-shaped defects, achieve better residue removal effect after chemical mechanical polishing and improve the reliability and stability of a semiconductor device.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a wafer cleaning method after chemical mechanical polishing. Background technique [0002] As the size of semiconductor devices decreases day by day, due to the deposition process of multi-layer interconnection or relatively large filling depth, the excessive fluctuation of the wafer surface causes the difficulty of focusing in the lithography process, which weakens the ability to control the line width and reduces the Therefore, the industry introduces chemical mechanical polishing (CMP) to planarize the wafer surface. [0003] The process of chemical mechanical polishing generally comprises the following steps: first, wafer is placed on a grinding head, and makes described wafer surface contact with a grinding pad (Pad) downwards, then, passes between wafer surface and described grinding pad The relative motion planarizes the wafer surface. The grinding liquid ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B08B3/08B08B7/04B08B1/04H01L21/02
Inventor 黄孝鹏
Owner SEMICON MFG INT (SHANGHAI) CORP
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