Bonding material, electronic component, and bonded structure
A technology for joining structures and joining materials, which is applied in the direction of welding/cutting media/materials, electrical components, electrical solid devices, etc., and can solve problems such as poor product quality
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Embodiment approach 2
[0058] The bonding material of the present embodiment contains 2 to 10.5% by weight of Cu, 0.02 to 0.2% by weight of Ge, 0.02 to 0.11% by weight of Ni, and 89.19 to 97.96% by weight of Bi. The content of Cu is preferably 2 to 6% by weight, the content of Ge is preferably 0.05 to 0.1% by weight, and the content of Ni is preferably 0.05 to 0.08% by weight. Compared with the bonding material of Embodiment 1, the bonding material of this embodiment has higher impact resistance.
[0059] The impact resistance can be evaluated by an experiment in which a 60-g measuring weight is impacted from a height of 180 mm to the side of a chip capacitor having a size of 1.6 mm×0.8 mm.
[0060] When the above impact resistance test was performed using a chip capacitor having a junction of 92.56% by weight Bi-7.4% by weight Cu-0.04% by weight of Ge, the chip capacitor was broken at the junction. Observation of the cross-section of the joint after fracture revealed that the fracture occurred at ...
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