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Manufacture method of silicon chip

A manufacturing method and technology for silicon wafers, applied in the field of silicon wafer manufacturing, can solve problems such as lower yield and substrate damage, and achieve the effect of finer surface roughness

Inactive Publication Date: 2010-12-15
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Next, as shown in the background art, even if the side surface of the silicon block is mechanically polished so that the surface roughness after polishing is 8 μm or less, the substrate will still be damaged when manufacturing a solar cell using a silicon wafer, and the yield may decrease. such a phenomenon

Method used

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  • Manufacture method of silicon chip
  • Manufacture method of silicon chip

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Experimental program
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Embodiment Construction

[0016] figure 1 It is a figure which shows the state which cuts a silicon ingot into a silicon block in this invention. figure 2 It is a figure which shows the state which cut|disconnects a silicon block into silicon wafers in this invention.

[0017] The invention relates to the properties of semiconductor blocks in connection with the manufacture of semiconductor wafers of polycrystalline silicon for the manufacture of solar cells. Furthermore, silicon is generally widely used as a semiconductor, but gallium arsenide alloys, germanium, silicon carbide alloys, and the like can also be applied to the present invention.

[0018] In addition, in the following description, polysilicon will be described as an example.

[0019] Such as figure 1 As shown, the polycrystalline silicon ingot 2 is manufactured by cutting the polycrystalline silicon ingot 4 while supplying the slurry for silicon ingot cutting to the cutting device. And the polycrystalline silicon block 2 is manufact...

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Abstract

The invention provides a manufacture method of a silicon chip, which comprises the steps of: cutting a silicon ingot into silicon blocks with preset surface roughness by using silicon ingot cutting slurry, and cutting the silicon blocks into silicon chips respectively with preset thicknesses, wherein the silicon ingot cutting slurry contains grains and alkaline matters, the slurry contains organic amine with mass ratio being above 0.5 and less than 5.0 of water relative to the liquid content of the slurry, the pH value of the slurry is above 12, the slurry is used at a temperature above 65 DEG C and below 95 DEG C, and the preset surface roughness is set below a higher limit of an area in which the improvement ratio of the damage of a substrate is above 80 percent.

Description

[0001] The patent application of the present invention is an invention whose name is "Manufacturing Method of Silicon Ingot and Wafer", the application date is May 11, 2005, the international application number is "PCT / JP2005 / 008603", and the national application number is "200580048866.9". A divisional application of a patent application. technical field [0002] The present invention relates to a silicon ingot manufacturing method for manufacturing a silicon ingot from a polycrystalline silicon ingot used to manufacture a silicon wafer for a solar cell, and a silicon ingot manufacturing method for manufacturing a silicon wafer using the silicon ingot manufactured by the manufacturing method. Background technique [0003] Polycrystalline silicon wafers used in the manufacture of solar cells are manufactured by manufacturing a rectangular prism-shaped polycrystalline silicon ingot, cutting out a plurality of rectangular prism-shaped polycrystalline silicon blocks from the pol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/04C09K3/14
Inventor 森川浩昭唐木田昇市河嵜贵文
Owner MITSUBISHI ELECTRIC CORP
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