Laterally diffused metal oxide semiconductor and electrostatic protection framework
A technology for oxide transistors and electrostatic protection, applied in circuits, electrical components, electric solid devices, etc., can solve problems such as poor antistatic ability, achieve the effect of improving reliability, improving electrostatic discharge ability, and simple operation
Inactive Publication Date: 2010-12-15
SINO WEALTH ELECTRONICS
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Problems solved by technology
[0006] The invention provides a laterally diffused metal oxide transistor to solve the problem of poor antistatic ability of the existing laterally diffused metal oxide transistor
[0007] The present invention also provides an electrostatic protection architecture, which includes a resistor and a laterally diffused metal oxide transistor electrically connected to the resistor, so as to solve the problem of poor antistatic ability of the existing electrostatic protection architecture
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[0035] The present invention will be described in more detail below with reference to schematic diagrams, wherein preferred embodiments of the present invention are shown, and it should be understood that those skilled in the art can modify the present invention described herein while still achieving the advantageous effects of the present invention. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.
[0036]In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's specific goals, such as changing from one embodiment to another in a...
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Abstract
The invention discloses a laterally diffused metal oxide semiconductor and an electrostatic protection framework. The laterally diffused metal oxide semiconductor comprises a substrate type I; a grid electrode formed on the substrate type I, a soft doped zone type II formed in the substrate type I, a high-voltage well region type I formed in the soft doped zone type II, a high-voltage well region type II formed in the soft doped zone type II, a substrate electrode region type I formed in the high-voltage well region type I, a source electrode region type II formed in the high-voltage well region type I, a drain electrode region type II formed in the high-voltage well region type II, a substrate metal electrode directly connected with the substrate electrode region type I, a source metal electrode directly connected with the source electrode region type II, a drain metal electrode directly connected with the drain electrode region type II, and a grid metal electrode directly connected with the grid electrode. By the invention, the electrostatic discharge capacity of the laterally diffused metal oxide semiconductor can be improved.
Description
technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a laterally diffused metal oxide transistor and an electrostatic protection structure. Background technique [0002] With the development of science and technology, there are more and more types of electronic products, and the integration degree of integrated circuits of electronic products is also getting higher and higher. The BCD process is an important process for the realization of smart power integrated circuits (Smart Power IC), which is characterized by the simultaneous integration of complementary metal oxide transistors (CMOS), bipolar (Bipolar) transistors and laterally diffused metal oxide transistors. (LDMOS) and other power devices are integrated together to integrate various functional systems such as control, analog and power on the same chip. In the field of power electronics, as a power device in the BCD process, laterally diffused metal oxide tr...
Claims
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Login to View More IPC IPC(8): H01L29/78H01L27/04
Inventor 吴炜
Owner SINO WEALTH ELECTRONICS