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Photoelectric conversion device and manufacture method thereof

A technology for a photoelectric conversion device and a manufacturing method, which is applied in photovoltaic power generation, circuits, electrical components, etc., can solve problems such as the adverse effect of photoelectric conversion efficiency, the large resistance value of materials, and the failure to effectively improve the conversion efficiency.

Active Publication Date: 2013-01-23
TATUNG UNIVERSITY +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] However, whether the above-mentioned transparent conductor is formed between the electrode and the semiconductor, or the above-mentioned transparent conductor is directly formed on the semiconductor as an electrode, the conversion efficiency may not be effectively improved due to the high resistance of the material. Furthermore, The interfacial energy barrier between the materials in these structures is thus increased, which will have an adverse effect on the photoelectric conversion efficiency

Method used

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  • Photoelectric conversion device and manufacture method thereof
  • Photoelectric conversion device and manufacture method thereof
  • Photoelectric conversion device and manufacture method thereof

Examples

Experimental program
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Embodiment 1

[0039] See Figure 2A to Figure 2C , to create a flow chart for the photoelectric conversion device of this embodiment. First, if Figure 2A As shown, the second semiconductor layer 22 is formed on the first semiconductor layer 21. In this embodiment, the first semiconductor layer 21 is a P-type doped silicon layer, while the second semiconductor layer 22 is an N-type doped silicon layer. silicon layer.

[0040] Next, if Figure 2B As shown, the first electrode layer 23 is formed on the first semiconductor 21, and the second electrode layer 24 is formed on the second semiconductor 22, wherein the second electrode layer 24 has an opening region 241 to expose the second semiconductor layer 22 . In this embodiment, the second electrode layer 24 is as follows Figure 1A and 1B As shown in the interdigital shape, moreover, the first electrode layer 23 in contact with the first semiconductor layer 21 can use a high-power functional material to form an Ohmic contact; the second ...

Embodiment 2

[0044] The photoelectric conversion device of this embodiment is substantially the same as that of Embodiment 1, except that the low-reflection conductive film 25 of this embodiment is a silver film.

Embodiment 3

[0046] The photoelectric conversion device of this embodiment is substantially the same as that of Embodiment 1, except that the low-reflection conductive film 25 of this embodiment is an aluminum film.

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Abstract

The invention relates to a photoelectric conversion device and a manufacture method thereof. The photoelectric conversion device comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, a first electrode layer connected with the first semiconductor layer, a second electrode layer connected with the second semiconductor layer and a low-reflection conductive film, wherein the second electrode layer is provided with an opening region to expose the second semiconductor layer; the low-reflection conductive film is arranged in the opening region, and is connected with the second electrode layer and the second semiconductor layer; the resistivity of the low reflection conductive film is less than or equal to that of the second semiconductor layer. Therefore, the photoelectric conversion device can effectively reduce the serial connection effect so as to improve the photoelectric conversion efficiency.

Description

technical field [0001] The present invention relates to a photoelectric conversion device and a manufacturing method thereof, in particular to a photoelectric conversion device capable of reducing series resistance and improving photoelectric conversion efficiency and a manufacturing method thereof. Background technique [0002] With the gradual shortage of existing energy sources (such as oil and coal mines), the development of alternative energy sources to replace the existing energy sources has gradually attracted attention. In alternative energy sources, solar cells have become the focus of attention because the solar energy is very abundant and does not cause environmental pollution. A solar cell is a photoelectric conversion device that converts light energy into electrical energy. Its basic structure is formed by joining P-type and N-type semiconductors. It uses P-N diodes to absorb light energy to generate free electrons and holes. Among them, electrons The holes an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0232H01L31/042H01L31/0224H01L31/0216H01L31/18H01L31/0693
CPCY02E10/50Y02E10/544Y02P70/50
Inventor 林烱暐陈易良
Owner TATUNG UNIVERSITY