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Memory

A memory, memory array technology, applied in static memory, read-only memory, digital memory information, etc., can solve problems such as a large number of programming voltages, inability to read traditional flash memory normally, and lengthy programming time.

Inactive Publication Date: 2011-01-19
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In conventional flash memory, the bit data in bit data distribution B must be programmed to have a threshold voltage level higher than the reference voltage PV, and the reference voltage PV must be higher than the highest threshold voltage Vthl_h (indicating the highest level in bit data distribution A). The critical voltage) is higher than a value range, otherwise the traditional flash memory cannot be read normally
In this way, traditional flash memory has the disadvantages of using a high voltage level reference voltage, a large number of programming voltages (Program Shots) and lengthy programming time

Method used

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Embodiment Construction

[0018] The access method related to this embodiment uses the information of whether the first and second memory cell currents corresponding to the first and second bit data in a memory cell have similar magnitudes to determine the first and second bit data programming status.

[0019] Please refer to figure 2 , which shows a block diagram of a memory according to an embodiment of the present invention. The memory 1 is, for example, a flash memory (Flash Memory), and includes a memory array 12 , operating circuits 14 and 16 . The memory array 12 includes a plurality of storage units, and each storage unit stores two pieces of data. The operation circuit 16 is, for example, a read circuit for reading data stored in the memory array 12 . The operating circuit 14 is, for example, a programming circuit for programming two bits of data in each storage unit. For example, the bit data stored in each memory cell can be programmed to indicate a logic value of 0 at a high threshold ...

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Abstract

A memory comprises a memory cell, a sense amplifier, and a control unit. The memory cell stores a first bit and a second bit. The sense amplifier senses a first cell current and a second cell current corresponding to the first and the second bits respectively with a voltage applying on the memory cell. The control unit determines a digital state of the first bit by comparing a first reference current with the first cell current or by comparing a reference data with a first delta current between the first cell current and the second cell current.

Description

technical field [0001] The present invention relates to a method for accessing a memory, and in particular to an access method applied to a memory including a multi-bit cell capable of storing (Multi-bit Cell). Background technique [0002] In today's era of rapid technological development, non-volatile memory (Non-volatile memory), such as flash memory (Flash), has been widely used in electronic products. For example, a flash memory includes a plurality of storage units, and each storage unit is used to store a bit of data. Each memory cell corresponds to a programmable threshold voltage, and the programmable threshold voltage is a logic value indicating the bit data. [0003] Please refer to figure 1 , which shows a schematic diagram of the distribution of the threshold voltage of the conventional flash memory. For example, the reference voltage PV is used as a judgment condition. The corresponding bit data whose threshold voltage is lower than the reference voltage PV...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/02G11C16/06
CPCG11C16/3454G11C11/5628G11C11/5642G11C2211/5634G11C7/16G11C16/10G11C2211/5621
Inventor 周聪乙周名峰李重毅周宗祺
Owner MACRONIX INT CO LTD