Method for manufacturing tungsten titanium alloy target structure

A production method and tungsten-titanium alloy technology, which are applied in metal material coating technology, manufacturing tools, metal processing equipment, etc., can solve the problem of not meeting the requirements of semiconductor targets, low bonding strength of tungsten-titanium alloy targets and backplates, etc. problem, to achieve high bonding strength and achieve the effect of industrialized production

Active Publication Date: 2011-11-02
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The problem solved by the invention is that the direct welding bonding strength between the tungsten-titanium alloy target and the back plate is not high enough to meet the requirements of the semiconductor target

Method used

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  • Method for manufacturing tungsten titanium alloy target structure
  • Method for manufacturing tungsten titanium alloy target structure
  • Method for manufacturing tungsten titanium alloy target structure

Examples

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specific Embodiment

[0075] Take 3N5, 4N5 or 5N tungsten-titanium alloy target as an example to illustrate the process steps and results of the present invention:

[0076] (1) Polish each surface of the tungsten-titanium alloy target (230mm in length, 202mm in width, and 12mm in thickness), first use 160# water-based sandpaper to polish each surface of the target for 10 minutes (min); then Use 400# water-based sandpaper to continue to polish each surface of the target for 8 minutes (min), so that a smooth and bright grinding surface can be obtained;

[0077] (2) Clean each surface of the polished tungsten-titanium alloy target with pure water or deionized water for 5 minutes (min), and dry it;

[0078] (3) Sandblasting process is carried out on each surface of the tungsten-titanium alloy target material after drying; adopt No. 46 white corundum, the air pressure is 0.4MPa, the distance from the nozzle of the sandblasting gun to the surface of the target material is 15cm, and the nozzle The angle ...

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Abstract

The invention discloses a method for manufacturing a tungsten titanium alloy target structure, which comprises the following steps of: providing a target, wherein the target is tungsten titanium alloy; activating the surface of the target; forming a metal coating on a welding surface of the target subjected to the activation by using chemical plating technology; and welding the target subjected to chemical plating treatment to a back plate. By chemically plating the metal coating on the welding surface of the tungsten titanium alloy target and using the metal coating as an intermediate, the target is welded with the back plate to realize firm bonding therebetween, and the target has higher bonding strength. The invention provides a stable technical process for plating a metal layer on thesurface of the tungsten titanium alloy target by the chemical plating method and realizes industrial production.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a target structure. Background technique [0002] Generally, the target assembly is composed of a target meeting the sputtering performance and a back plate combined with the target and having a certain strength. The back plate can play a supporting role when the target assembly is assembled to the sputtering base station, and has the effect of conducting heat. During the sputtering process, the working environment of the target assembly is relatively harsh, for example, the target assembly has a relatively high operating temperature, such as 100 to 300 degrees Celsius; One side is at 10 -9 In the high vacuum environment of Pa, a huge pressure difference is formed on the opposite sides of the target assembly; moreover, the target assembly is in a high-voltage electric field and magnetic field, and is bombarded by various particles. In such ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34B23K1/20
Inventor 姚力军潘杰王学泽袁海军
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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