Batch cvd method and apparatus for semiconductor process

Abstract

A batch CVD method repeats a cycle including adsorption and reaction steps along with a step of removing residual gas. The adsorption step is preformed while supplying the source gas into the process container by first setting the source gas valve open for a first period and then setting the source gas valve closed, without supplying the reactive gas into the process container by keeping the reactive gas valve closed, and without exhausting gas from inside the process container by keeping the exhaust valve closed. The reaction step is performed without supplying the source gas into the process container by keeping the source gas valve closed, while supplying the reactive gas into the process container by setting the reactive gas valve open, and exhausting gas from inside the process container by setting the exhaust valve to gradually decrease its valve opening degree from a predetermined open state.

Description

technical field [0001] The invention relates to a batch CVD (chemical vapor deposition, chemical vapor deposition) method and device, in particular to a semiconductor processing technology for forming a finished film on a processed object such as a semiconductor wafer. Here, semiconductor processing refers to the process of forming semiconductors in a predetermined pattern on wafers, glass substrates for FPDs (Flat Panel Displays) such as LCDs (Liquid Crystal Displays), etc. Various processes are performed to manufacture structures including semiconductor devices, wiring connected to semiconductor devices, electrodes, etc., on the object to be processed. Background technique [0002] In the manufacture of a semiconductor device constituting a semiconductor integrated circuit, various processes such as film formation, etching, oxidation, diffusion, and modification are performed on an object to be processed, such as a semiconductor wafer. Such film-forming treatment can be p...

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Problems solved by technology

However, the inventors of the present invention have found that, as will be described later, there is room for improvement in the characteristics related to film quality, throughput (throughput), and raw material gas consumption in this batch CVD method.

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