Unlock instant, AI-driven research and patent intelligence for your innovation.

Gate lead and manufacturing method thereof

A gate lead and manufacturing method technology, applied in semiconductor/solid-state device manufacturing, nonlinear optics, optics, etc., to achieve the effect of avoiding corrosion and corrosion

Active Publication Date: 2012-11-28
BOE TECH GRP CO LTD +1
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] To sum up, the main reason for the corrosion of the Gate Pad area of ​​the gate lead is the inherent problems of the manufacturing process and design of the liquid crystal display, and the structure of the gate lead in the prior art cannot prevent the Gate Pad area from being corroded

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gate lead and manufacturing method thereof
  • Gate lead and manufacturing method thereof
  • Gate lead and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0051] image 3 It is a schematic structural diagram of Embodiment 1 of the gate lead of the present invention, Figure 4 for image 3 Middle B-B sectional view, such as image 3 with Figure 4 As shown, the gate lead includes a gate layer region 1 , a gate layer protection layer 2 , a data layer region 3 , a data layer protection layer 4 , a second via hole 5 and a first via hole 9 . In this embodiment, the gate leads are formed on the substrate 8 . The gate layer protection layer 2 is located on the gate layer region 1; the data layer region 3 is located on the gate layer protection layer 2; the data layer protection layer 4 is located on the data layer region 3; the first via hole 9 is formed on the data layer layer protection layer 4, and located above the data layer region 3; the second via hole 5 is located above the gate layer region 1, and the gate layer region 1 and the data layer region 3 are connected through the second via hole 5. Specifically, in this embodim...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a gate lead and a manufacturing method of the gate lead. The gate lead comprises a gate layer area, a gate layer protective layer positioned above the gate layer area, a data layer area positioned above the gate layer protective layer, a data layer protective layer positioned above the data layer area, a first through hole formed in the data layer protective layer and positioned above the data layer area and a second through hole positioned above the gate layer area, wherein the gate layer area and the data layer area are connected by the second through hole. In the invention, the gate lead adopts the data layer area as a Gate Pad area, and as the material of the data layer area is corrosion-proof metal material, the Gate Pad area of the gate lead is protected from being corroded effectively.

Description

technical field [0001] The invention relates to the field of liquid crystal display manufacture, in particular to a gate lead and a method for manufacturing the gate lead. Background technique [0002] Corrosion of gate leads is a common defect in liquid crystal displays, especially in customer rework products. figure 1 It is a structural schematic diagram of a gate lead in the prior art, figure 2 for figure 1 Middle A-A sectional view, such as figure 1 with figure 2 As shown, the gate lead includes a gate layer region 1 formed on a substrate 8, a gate layer protection layer 2 and a data layer protection layer 4 located on the gate layer region 1, and a gate layer protection layer 2 and a data layer protection layer 4. The first via hole 9 and the transparent conductive layer 7 are formed on the data layer protection layer 4 . The material of the gate layer region 1 is usually a double-layer metal of Mo layer and AlNd layer, and the Mo layer is located on the AlNd lay...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/1362H01L23/52H01L21/768
Inventor 秦纬
Owner BOE TECH GRP CO LTD