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Magnetically de-coupling magnetic memory cells and bit/word lines for reducing bit selection errors

一种存储器单元、磁存储器的技术，应用在静态存储器、数字存储器信息、信息存储等方向

Inactive Publication Date: 2011-02-16
GLOBALFOUNDRIES INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Another factor that has been largely overlooked is the undesired stray magnetic field contribution from the local wires supplying the current

Method used

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  • Magnetically de-coupling magnetic memory cells and bit/word lines for reducing bit selection errors
  • Magnetically de-coupling magnetic memory cells and bit/word lines for reducing bit selection errors
  • Magnetically de-coupling magnetic memory cells and bit/word lines for reducing bit selection errors

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Embodiment Construction

[0018] The present invention will be described in connection with an exemplary method for shielding a magnetic memory cell from a magnetic field. It should be understood, however, that the invention is not limited to the particular arrangements, materials, layers, and process steps used to form the memory cells shown and described herein. Modifications to the illustrative embodiments will become apparent to those skilled in the art from the teachings described herein.

[0019] With particular regard to the process steps, it is emphasized that the description provided here is not intended to cover all of the process steps required to successfully form a functional device. Rather, certain process steps conventionally used in forming integrated circuit devices, such as, for example, wet cleaning and annealing steps, are purposefully not described here for the sake of brevity of description. However, those process steps omitted from this general description should be easily under...

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Abstract

Techniques for shielding magnetic memory cells from magnetic fields are presented. In accordance with aspects of the invention, a magnetic storage element is formed with at least one conductive segment electrically coupled to the magnetic storage element. At least a portion of the conductive segment is surrounded with a magnetic liner. The magnetic liner is operative to divert at least a portion of a magnetic field created by a current passing through the conductive segment away from the magnetic storage element.

Description

technical field [0001] The present invention relates generally to electrical and electronic devices, and more particularly to magnetic memories. Background technique [0002] A possible scaling mechanism for conventional magnetic random access memory (MRAM) is spin-torque switching, in which injected spin-polarized electrons interact with the magnetic moment of the free layer in the MRAM cell and transfer their Angular momentum (often called spin-momentum transfer or SMT). If sufficient current is applied, the applied spin torque turns the free layer into parallel or antiparallel to the pinned layer in the cell, depending on the direction of current flow. This localized current switching is attractive for memory array applications because it does not have the magnetic half-selection problem of conventional MRAM cells. Furthermore, spin-torque switching requires less power to operate, and the amount of current required decreases as devices scale down to smaller dimensions. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/00H10N50/10
CPCH01L43/08G11C11/16H01L27/228H01L2924/0002G11C11/1659H10B61/22H10N50/10H01L2924/00
Inventor 所罗门·阿塞法西瓦南达·K·卡纳卡萨巴帕希詹纳茨·J·诺瓦克菲利普·L·特劳伊劳德
Owner GLOBALFOUNDRIES INC