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Quartz glass crucible and process for producing the same

A technology of quartz glass crucible and manufacturing method, which is applied in glass manufacturing equipment, manufacturing tools, glass molding, etc., can solve the problems of difficult quartz powder layer melting and inability to form a seal, and achieve the effect of reducing air bubbles

Inactive Publication Date: 2011-03-02
JAPAN SUPER QUARTZ CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as the diameter of the crucible increases, it is difficult to melt the surface of the quartz powder layer uniformly, and it is often impossible to form a good seal.

Method used

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  • Quartz glass crucible and process for producing the same
  • Quartz glass crucible and process for producing the same
  • Quartz glass crucible and process for producing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0043] Examples of the present invention are shown below.

reference example 1

[0045] Synthetic quartz powder A with an average particle diameter of 175 μm and synthetic quartz powder B with an average particle diameter of 200 μm were respectively used on the inner surface of the crucible, and a quartz glass crucible with a diameter of 32 inches was manufactured by the above-mentioned rotational molding method. When the number of bubbles contained in the inner surface layer is 6 mm, the number of bubbles with a diameter of 1 mm or more is 3.5 in the synthetic quartz powder A and 6 in the synthetic quartz powder B. As shown by this result, when the average particle diameter of the quartz powder is large, the number of bubbles having a diameter of 1 mm or more tends to increase.

reference example 2

[0047] Synthetic quartz powder C with an average particle diameter of 128 μm and synthetic quartz powder B with an average particle diameter of 200 μm were used on the inner surface layer of the crucible respectively, and a quartz glass crucible with a diameter of 24 inches was manufactured by the above-mentioned rotational molding method, and the thickness was investigated to be The air bubble content rate contained in the inner layer of 6 mm in diameter is 0.5 mm or less. figure 2 Indicates the findings of this investigation. exist figure 2 Among them, the X-axis is the distance (mm) along the wall surface from the center of the bottom of the crucible to the upper end of the edge, the range of 0-250mm represents the bottom (bottom), the range of 250-350mm represents the corner (curved portion), 350 A range of ~600 mm represents a straight body. according to figure 2 It is clear that in the crucible corner (curved portion), the bubble content rate of the synthetic quart...

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Abstract

A quartz glass crucible for use in pulling up a silicon single crystal is provided which has an inner surface layer having excellent homogeneity and a low void content. Also provided is a process for producing the quartz glass crucible. The process for producing a quartz glass crucible for use in pulling up a silicon single crystal comprises forming an inner surface layer (30) from synthetic-quartz powders. In forming the inner surface layer (30), an inner part (31) of the inner surface layer (30) is formed from a first synthetic-quartz powder, and a surface-side part (32) of the inner surface layer (30) is formed from a second synthetic-quartz powder which has a smaller average particle size than the first synthetic-quartz powder. The second synthetic-quartz powder forming the surface-side part (32) of the inner surface layer (30) has an average particle diameter smaller by at least 10 mum than the average particle diameter of the first synthetic-quartz powder forming the inner part (31) of the inner surface layer (30).

Description

technical field [0001] The present invention relates to a quartz glass crucible used in pulling silicon single crystals, in particular to a large-sized crucible with a caliber of 32 inches or more, excellent homogeneity of the inner surface layer and low air bubble content rate of the inner surface layer Quartz glass crucible and its manufacturing method. Background technique [0002] Silicon single crystals used in substrates of semiconductor devices, solar cells, and the like are mainly produced by the CZ (Czochralski) method. This manufacturing method is a method of filling high-purity polycrystalline silicon in a quartz glass crucible, melting it in an inert gas atmosphere, dipping a seed crystal in it, and pulling it slowly, thereby pulling single crystal silicon from the molten silicon . [0003] Conventionally, the above-mentioned quartz glass crucibles have been produced by rotational molding or the like (Patent Documents 1 and 2). This manufacturing method is a m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C03B20/00C30B15/10
CPCC03B19/095C30B15/10Y10T117/1032
Inventor 原田和浩佐藤忠广佐藤贤
Owner JAPAN SUPER QUARTZ CORP
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