Pattern transfer method and mask manufacturing method

Abstract

The invention discloses a pattern transfer method and a mask manufacturing method. The pattern transfer method comprises the following steps of: forming a photoresist layer on a substrate, wherein the photoresist layer at least comprises a positive photoresist layer, a negative photoresist layer and a transparent material layer positioned between the positive photoresist layer and the negative photoresist layer; the thickness of the photoresist layer close to the substrate is greater than that of the photoresist layer far away from the substrate and the transparent material layer can be dissolved in a developing agent of the photo-resist layer far away from the substrate; and then exposing the photoresist layer at one time, stepwise developing the photoresist layer and etching the stepwise developed photoresist layer to transfer a pattern to the photoresist layer close to the substrate so as to transfer the photoresist layer to the substrate. In the method, the pattern can be transferred through one-time exposing, so that the number of masks is reduced, production cost is saved, production efficiency is improved, and the critical dimension of the pattern transferred to the photoresist layer is controlled by adjusting exposing energy and developing time.

Description

technical field [0001] The invention relates to a pattern transfer technology, especially a pattern transfer method and a mask making method. Background technique [0002] With the rapid development of integrated circuit design, the pattern size of the mask layout is shrinking day by day, and the optical proximity effect is becoming more and more obvious, that is, when the exposure light passes through the mask plate and is projected on the photoresist on the surface of the silicon wafer, it is in the photoresist Compared with the mask pattern, the pattern formed on the surface will be deformed and deviated, which will affect the pattern formed on the surface of the silicon wafer, that is, the photolithographic pattern. [0003] refer to figure 1 , because the pattern spacing in the mask layout 110 is too small, in the process of exposing the mask layout 110, the exposure rays transmitted through adjacent patterns overlap or cancel each other, so that the obtained correspon...

AI Technical Summary

Problems solved by technology

[0008] However, using the existing photolithography technology not only needs to make at least two reticles, which increases the production cost of each photolithography process, but also requires a lot of manpower and time, which affects the production efficiency

In addition, better etching effects can be achieved by upgrading lithography equipment, that is, using lithography equipment with a smaller resolution, but this also greatly increases the cost of lithography

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