Method for removing dielectric layer on surface of metal layer at top of semiconductor device

A surface dielectric layer and optical device technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as inability to scratch, short circuit between reflective metal patterns, and affect device display performance, so as to avoid metal surface Scratches, the effect of reducing production costs
CN100449804CInactive Publication Date: 2009-01-07SEMICON MFG INT (SHANGHAI) CORP +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SEMICON MFG INT (SHANGHAI) CORP
Publication Date
2009-01-07
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses method for removing dielectric layer on surface of metal layer at top of semiconductor optical device. The metal layer at top possesses graph area and graph seam area. The dielectric layer covers graph area of metal layer at top, and fills in graph seam area of metal layer at top. The method includes steps: forming a sacrificial layer on the dielectric layer; etching the sacrificial layer, and dielectric layer; exposing graph area of metal layer at top.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for removing a dielectric layer on the surface of a metal layer on the top of a semiconductor optical device. Background technique

[0002] In the current manufacturing process of semiconductor optical devices, a dielectric layer is usually formed on the surface of the top metal layer, and then the electrical performance test of the semiconductor optical device substrate containing the top metal layer is performed, and then the dielectric layer is removed to obtain a smooth and flat top. surface of the metal layer, and then proceed to subsequent production steps.

[0003] figure 1 It is a schematic diagram of the deposition effect of the dielectric layer on the surface of the metal layer on the top of the semiconductor optical device in the prior art, such as figure 1 As shown, a dielectric layer 10 is deposited on the surface of the top metal layer...

Claims

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