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CMOS image sensor and manufacturing method thereof

A technology of an image sensor and a manufacturing method, applied in the field of image sensors, can solve the problems of low reliability, high cost, difficult control of bonding silicon substrates and light-transmitting substrates, etc., and achieves easy control, simple operation, and solving control difficulties. Effect

Active Publication Date: 2011-03-30
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The present invention solves the problems of difficult control, high cost and low reliability of bonding silicon substrate and light-transmitting substrate by glue coating method in the prior art CMOS image sensor

Method used

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  • CMOS image sensor and manufacturing method thereof

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Embodiment Construction

[0022] The embodiment of the present invention adopts the simple process and easy-to-control compression molding method to cover the image sensing area with a resin layer, and replaces the light-transmitting substrate and glue layer with the resin layer, which simplifies the manufacturing process and structure of the CMOS image sensor .

[0023] The manufacturing method of the image sensor according to the embodiment of the present invention includes: providing a wafer (wafer), and the wafer includes a front side (front side) on which an image sensing region and electrode pads are formed and a back side (back side) opposite to the front side. ); covering the front surface of the wafer with a resin layer by a compression molding method. The implementation of the present invention will be described in detail below with reference to the drawings and examples.

[0024] figure 2 It is a flow chart of the manufacturing method of the CMOS image sensor of the present embodiment, ...

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Abstract

The invention provides a CMOS image sensor and a manufacturing method thereof. The CMOS image sensor comprises a wafer, a resin layer and resins for light collection, wherein the wafer comprises a front side and a back side opposite to the front side; an image sensing area and an electrode pad are formed at the front side; the resin layer is covered at the front side of the wafer by a compression molding method; and the resins for light collection are covered on the resin layer by a compression molding method. The invention solves the problems of difficult control when adopting the coating method, high cost and poor reliability in the prior art.

Description

technical field [0001] The present invention relates to an image sensor, in particular to a CMOS image sensor and a manufacturing method thereof. Background technique [0002] Image sensors receive light signals from objects and convert them into electrical signals that can be transmitted for further processing, such as digitization, and then stored in a storage device such as a memory, optical or magnetic disk, or for display on a display display etc. Image sensors are commonly used in devices such as digital still cameras, video cameras, scanners, facsimile machines, and the like. Image sensors generally include charge-coupled device (CCD) image sensors and CMOS image sensors (CIS, CMOS Image Sensor). Compared with CCD image sensors, CMOS image sensors have the advantages of high integration, low power consumption, and low production cost. [0003] An existing CMOS image sensor with chip on glass (COG, Chip on Glass) packaging (package) structure such as figure 1 As sh...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/56H01L21/60H01L27/146H01L23/28
CPCH01L2224/10
Inventor 刘钊朱虹徐锦心奚民伟
Owner SEMICON MFG INT (SHANGHAI) CORP