Chemical vapor deposition equipment and cooling tank thereof

Abstract

The invention provides chemical vapor deposition equipment and a cooling tank thereof. The chemical vapor deposition equipment comprises a reaction chamber, at least one clean gas channel connected between the reaction chamber and a remote plasma source, and an anti-fluorinated material layer formed in the clean air channel. The clean gas channel can be formed in the tank body of the cooling tank. The invention can ensure the cleanliness inside the reaction chamber.

Description

【Technical field】 [0001] The invention relates to a chemical vapor deposition equipment and a cooling box thereof, in particular to a chemical vapor deposition equipment capable of self-cleaning a cavity and a cooling box thereof. 【Background technique】 [0002] Chemical Vapor Deposition (CVD) is a chemical process technology used to produce solid materials with high purity and good performance. General chemical vapor deposition (CVD) equipment can perform chamber self-cleaning (Chamber self-clean) to improve the cleanliness of the reaction chamber (Chamber). At this point, a purge gas such as NF 3 The gas can be dissociated into fluorine (F) ions by a remote plasma source (Remote Plasma Source, RPS), and the fluorine ions can be passed into the reaction chamber through the cooling block and the gas pipeline to clean the reaction Chamber. [0003] However, since the cooling box or gas pipeline is made of metal materials, such as aluminum, before the fluorine ions enter th...

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Problems solved by technology

[0003] However, since the cooling box or gas pipeline is made of metal materials, such as aluminum, before the fluorine ions enter the reaction chamber, some fluorine ions may react with the metal material of the cooling box or gas pipeline, and cannot Into the reaction chamber, for example, fluoride ions may react with aluminum to form aluminum fluoride

Therefore, the fluoride ions entering the reaction chamber may not be enough to completely clean the chamber itself, that is, the cleaning rate is insufficient, which affects the cleanliness of the reaction chamber.

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