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Failure detection method and failure detection device

A detection method and detection device technology, which is applied in the direction of measuring devices, semiconductor/solid-state device testing/measurement, electrical measurement, etc., can solve the problems of low positioning sensitivity and precision, achieve the effect of improving sensitivity and precision, and solving size restrictions

Inactive Publication Date: 2011-04-06
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When detecting defects on metal interconnect lines with narrow dimensions, due to the limitation of laser spot size, the sensitivity and accuracy of defect location of OBIRCH technology are low

Method used

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  • Failure detection method and failure detection device
  • Failure detection method and failure detection device
  • Failure detection method and failure detection device

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Embodiment Construction

[0035] The present invention provides methods and apparatus for locating bridging defects between two electrical conductors to be tested. Set an output terminal on each of the two conductors to be tested so that the two output terminals have the same potential. Input a constant detection current to any conductor to be tested, if a current is detected on another conductor to be tested, it means that there is a bridging defect between the two conductors to be tested. On any conductor to be tested, a constant detection current is sequentially input to the detection points arranged along the predetermined path, and when the current and the rate of change of the current on any conductor to be measured are detected, the detection point or current change rate can be determined. There are bridging defects in its adjacent range.

[0036] Based on the above principles, the present invention provides the following failure detection methods.

[0037] Such as figure 2 As shown, the fai...

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Abstract

The invention discloses a failure detection method and a failure detection device, which are used for detecting bridging defects of two conductors to be detected. The method comprises the following steps of: respectively arranging an output end on the two conductors to be detected, wherein the electric potential of the two output ends is equal; sequentially inputting constant detection current to any one conductor to be detected along detection points arranged in a preset path; detecting output current of the two output ends, and establishing a corresponding relationship between the output current at the output ends and the detection point positions based on the position information of the detection points and output current information of the two output ends; and judging whether the detection points have defects or not according to the corresponding relationship. The invention can effectively detect and position the bridging defects between metal interconnection lines in a semiconductor device, and improve the sensitivity and accuracy of positioning the defects.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a failure detection method and a failure detection device for locating bridging defects between metal interconnection lines in a semiconductor device. Background technique [0002] With the further improvement of the integration level of integrated circuits, the failure problem caused by metal interconnection lines is particularly prominent after entering the 45nm process. Even a very small defect will cause the semiconductor device to be completely scrapped. It is an important part of the failure analysis of semiconductor devices to perform failure detection on the connection and accurately locate the defect location. [0003] Defects in metal interconnects are generally caused by breakage of metal interconnects, electromigration of metal atoms, oxidation of metal interconnects, bridging between metal interconnects, and the like. Bridging is an unwanted conductive pat...

Claims

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Application Information

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IPC IPC(8): H01L21/66H01L21/00G01R31/02
Inventor 龚斌郭强
Owner SEMICON MFG INT (SHANGHAI) CORP