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Semiconductor light-emitting device with double-sided passivation

一种发光器件、半导体的技术，应用在半导体器件、半导体/固态器件制造、半导体/固态器件零部件等方向，能够解决增加反向漏电流量、降低LED效率和稳定性、增大表面复合率等问题

Active Publication Date: 2011-04-13
LATTICE POWER (JIANGXI) CORP
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Problems solved by technology

The increased surface recombination rate in turn increases the amount of reverse leakage current, which in turn reduces the efficiency and stability of the LED

Method used

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  • Semiconductor light-emitting device with double-sided passivation
  • Semiconductor light-emitting device with double-sided passivation
  • Semiconductor light-emitting device with double-sided passivation

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specific Embodiment

[0038] In one embodiment, the conventional substrate is patterned and etched to form an independent mesa. The size of each table is about 300×300μm 2 . The lower passivation layer is made of 500 angstroms thick SiO 2 Layer is formed, and the upper passivation layer is made of 2000 angstroms thick SiO 2 Layer formation. After etching, the size of the p-side electrode is about 250×250μm 2 . The upper surface area of ​​the device after removing the edges is about 280×280μm 2 .

[0039] In one embodiment, the size of each mesa is approximately 300×300μm 2 . The lower passivation layer is made of 500 angstroms thick SiO 2 Layer is formed, and the upper passivation layer is made of 2000 angstroms thick SiN x Layer formation. After etching, the size of the p-side electrode is about 250×250μm 2 . The area of ​​the upper surface of the device after removing the edges is about 280×280μm 2 .

[0040] In one embodiment, the size of each mesa is approximately 300×300μm 2 , The lower passiv...

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Abstract

A light-emitting device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped layer, and a multi-quantum-well (MQW) active layer situated between the first and the second doped layers. The device also includes a first electrode coupled to the first doped layer and a first passivation layer situated between the first electrode and the first doped layer in areas other than an ohmic-contact area. The first passivation layer substantially insulates the first electrode from edges of the first doped layer, thereby reducing surface recombination. The device further includes a second electrode coupled to the second doped layer and a second passivation layer which substantially covers the sidewalls of the first and second doped layers, the MQW active layer, and covers part of the horizontal surface of the second doped layer.

Description

Technical field [0001] The invention relates to the design of semiconductor light emitting devices. More specifically, the present invention relates to a novel semiconductor device with double-sided passivation that effectively reduces leakage current and enhances device reliability. Background technique [0002] It is expected that solid-state lighting will lead the next generation of lighting technology. High-brightness light-emitting diodes have gradually expanded from the light source for display devices to the replacement of light bulbs for conventional lighting. Under normal circumstances, cost, energy efficiency and brightness are the three most important metrics that determine the commercial viability of LEDs. [0003] The light generated by the LED comes from the active region "sandwiched" between the acceptor doped layer (p-type doped layer) and the donor doped layer (n-type doped layer). When the LED is applied with a forward voltage, carriers, including holes from th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L23/488H01L27/15H01L33/40H01L33/44
CPCH01L2221/6835H01L2221/68359H01L33/0079H01L33/44H01L21/6835H01L33/405H01L33/0093
Inventor 江风益刘军林王立
Owner LATTICE POWER (JIANGXI) CORP
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