Method for reducing reflection power in plasma etching
A technology of reflected power and plasma, which is applied in the direction of plasma, semiconductor/solid-state device manufacturing, discharge tube, etc., can solve the problems of lower product yield, short circuit or open circuit of logic circuit, polymer bombardment, etc., to improve yield, Effect of reducing reflected power
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[0050] In order to make the object, technical solution and advantages of the present invention more clear, the present invention will be further described in detail by giving specific embodiments and referring to the accompanying drawings.
[0051] The invention provides a method for reducing the reflected power in plasma etching, in which method, the wafer to be etched will be subjected to a stabilization treatment process, an insulating anti-reflection layer etching process, and transformation ( transition) treatment process, adhesive layer removal process, main etching process, bottom adhesive layer removal process, over-etching process and charge release process to complete the etching of the metal layer of the wafer. Wherein, a conversion treatment process is added between the insulating anti-reflection layer etching process and the adhesive layer removal process. In the conversion process, the source power is first reduced to a preset source power value, and the reduced ...
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