Method of manufacturing a semiconductor component and structure
A semiconductor and conductive structure technology, applied in the field of metallization systems, can solve the problems of unprotected side surface 28 corrosion, electromigration, sensitivity, etc.
Inactive Publication Date: 2015-07-22
SEMICON COMPONENTS IND LLC
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Problems solved by technology
A disadvantage of the semiconductor assembly 50 is that the side surfaces 28 are not protected and are susceptible to corrosion and electromigration
Method used
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[0026] In the following description and claims, the terms "on," "overlying," and "over" may be used to mean that two or more elements are in direct physical contact with each other. However, "over" may also mean that two or more elements are not in direct contact with each other. For example, "over" may mean that one element is above another element, but the elements do not contact each other and there may be another element or elements between the two elements.
[0027] In general, the present invention provides a semiconductor component and a method for manufacturing the semiconductor component which protects the metallization system of the semiconductor component from damage by, for example, electromigration. According to an embodiment of the present invention, a semiconductor component is fabricated using double exposure of a photosensitive material, such as a photoresist layer, during the formation of a copper protection layer. In double exposure, a photoresist layer is ...
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A semiconductor component and methods for manufacturing the semiconductor component that includes a double exposure of a layer of photoresist or the use of multiple layers of photoresist. A metallization structure is formed on a layer of electrically conductive material that is disposed on a substrate and a layer of photoresist is formed on the metallization structure. The layer of photoresist is exposed to light and developed to remove a portion of the photoresist layer, thereby forming an opening. Then, a larger portion of the photoresist layer is exposed to light and an electrically conductive interconnect is formed in the opening. The larger portion of the photoresist layer that was exposed to light is developed to expose edges of the electrically conductive interconnect and portions of the metallization structure. A protection layer is formed on the top and edges of the electrically conductive interconnect and on the exposed portions of the metallization structure.
Description
technical field [0001] The present invention relates generally to semiconductor components, and more particularly to metallization systems in semiconductor components. Background technique [0002] A semiconductor assembly includes one or more semiconductor devices fabricated from a semiconductor substrate. Generally, metal interconnects are formed on a semiconductor substrate to electrically connect semiconductor devices to each other or to electrical contacts for transmitting electrical signals to other devices. figure 1 is a cross-sectional view of a prior art semiconductor component 10 formed from a silicon substrate 12 . Although not shown, a semiconductor device is formed from a silicon substrate 12 . Aluminum layer 14 is formed on silicon substrate 12 , and dielectric passivation layer 16 is formed on a portion of aluminum layer 14 and on silicon substrate 12 . A seed metal layer 18 is formed on portions of the aluminum layer 14 not protected by the dielectric pass...
Claims
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IPC IPC(8): H01L21/768H01L23/52
CPCH01L2224/13664H01L2224/11914H01L2924/01013H01L2224/13007H01L2924/14H01L2224/11472H01L2224/02126H01L2224/13147H01L2224/13155H01L2224/13655H01L2224/13647H01L2924/01074H01L2924/01046H01L2924/0002H01L2224/0345H01L2224/13644H01L2224/13583H01L2224/05027H01L2224/11906H01L2924/01029H01L24/03H01L2924/00013H01L2924/01006H01L24/13H01L23/58H01L2924/014H01L2224/0401H01L2224/05572H01L2224/13562H01L24/05H01L2924/01022H01L23/3157H01L21/76885H01L2224/13611H01L2924/01033H01L2224/05166H01L2224/13582H01L2224/11474H01L2924/01082H01L2924/01047H01L2924/00014H01L2224/05647H01L24/11H01L2924/01079H01L2924/01078H01L2224/13584H01L2224/136H01L2224/03912H01L24/48H01L2224/13099H01L2224/13599H01L2224/05599H01L2224/05099H01L2224/29099H01L2224/29599H01L2224/05552H01L2224/45099H01L2224/45015H01L2924/207H01L21/56H01L21/64H01L23/48H01L23/53238H01L23/53252H01L24/10
Inventor M·J.·塞登F·J.·卡尼
Owner SEMICON COMPONENTS IND LLC