Semiconductor structure and manufacturing method thereof

Abstract

The invention provides a semiconductor structure and a forming method thereof. The semiconductor structure comprises a substrate, a source region, a drain region and a gate region, wherein the source region and the drain region are formed in the substrate, and the gate region is formed on the substrate; a first contact hole region is respectively arranged on the source region and the drain region, and connected with the source region and the drain region through a first metal; at least one part of the first metal below the first contact hole region is higher than the first metal outside the first contact hole region; a second contact hole region is arranged on the gate region and connected with the gate region through a second metal; and at least one part of the second metal or polysilicon below the second contact hole region is higher than the second metal or polysilicon outside the second contact hole region. Since the contact holes of the source region, drain region, gate region and the like adopt a self-alignment technique, the semiconductor structure provided by the invention can effectively reduce the area of the semiconductor structure, thereby enhancing the integration level of the integrated circuit. By using the semiconductor structure provided by the invention, the area of the chip can be reduced by 5-20%.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] With the increasing integration of semiconductor integrated circuits, the size and size of semiconductor devices are also shrinking. As the size of semiconductor transistors shrinks, their channel lengths also shrink. However, the channel size of semiconductor transistors cannot be scaled down without limit. When its length is reduced to a certain extent, various problems derived from the reduction of channel length will occur. Therefore, how to improve the integration of integrated circuits from other aspects has become an urgent problem to be solved. In addition, in terms of technology, the existing small-scale devices themselves have great challenges to the requirements of lithography and etching. Especially the contact hole: On the one hand, the size of the cont...

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