Supercharge Your Innovation With Domain-Expert AI Agents!

Stack type differential inductor

A differential inductance, stacking technology, applied in the field of microelectronics, can solve the problem of large area of ​​inductance, achieve the effect of improving quality Q value, reducing production cost, and reducing chip area

Inactive Publication Date: 2011-06-08
SHANGHAI HUA HONG NEC ELECTRONICS
View PDF1 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in order to obtain a larger inductance value, the inductor of the traditional differential structure still needs a relatively large area

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Stack type differential inductor
  • Stack type differential inductor
  • Stack type differential inductor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] The stacked differential inductor described in the present invention is a multi-layer structure, including: upper and lower metal coils, the upper and lower metal coils have symmetrical patterns; there are inductor ports on the metal coils; the first layer of metal coils starts from one port of the inductor, passes through A half-circle of metal wiring is connected to another layer of metal wires through an interlayer through hole; another layer of metal is routed through a half circle, connected to the first layer of metal through an interlayer through hole, and the upper and lower layer metal coils are interconnected.

[0015] In more detail, the planar structure of stacked differential inductance with upper and lower layers aligned in the present invention (taking two layers of equal thickness metal and three turns of octagonal inductance as an example), its plan view is shown in figure 2 , its three-dimensional structure see image 3 . from figure 2 It can be se...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a stack type differential inductor. The stack type differential inductor has a multilayer structure, and comprises an upper layer metal coil and a lower layer metal coil, wherein the upper layer metal coil and the lower layer metal coil have symmetric patterns; the metal coils are provided with inductance ports; the first layer metal coil passes through a half cycle of metal wire and an interlayer through hole and is connected with another layer metal wire from one port; the other layer metal passes through the half circle of wire and the interlayer through hole and is connected with the first layer metal; and the upper layer metal coil is interconnected with the lower layer metal coil. Since the mutual inductance between the completely symmetric upper layer metal and lower layer metal is fully utilized, the inductance of the inductor is effectively improved under the same area condition compared with the inductance of the conventional differential inductor. Both quality (Q) factor and inductance are obviously improved under the same area condition.

Description

technical field [0001] The invention relates to the field of microelectronics, in particular to a differential inductor using a stacked structure. Background technique [0002] At present, a large number of passive devices are included in integrated circuits, among which on-chip inductors are a very important one, and on-chip inductors are one of the important components of radio frequency CMOS / BiCMOS integrated circuits. In typical wireless products, inductive components have a significant impact on the overall RF performance. Therefore, the design and analysis of these inductive components have also been extensively studied. As the core component of the RF circuit, the inductor can usually affect the overall performance of the entire circuit. At present, on-chip inductors with high quality factors are widely used in RF circuit modules such as voltage-controlled oscillators and low-noise amplifiers. The stacked on-chip inductor greatly reduces the chip area and reduces t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L23/522H01F17/00H01F27/28H01F27/29H01F37/00
CPCH01L23/5227H01F17/0013H01L2924/0002H01L2924/00
Inventor 邱慈云徐向明蔡描
Owner SHANGHAI HUA HONG NEC ELECTRONICS
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More