Method for processing precision patterns

Abstract

The invention provides a method for processing precision patterns. The method at least comprises the following steps: firstly, forming a first crystallizable material layer on a substrate; secondly, patterning the first crystallizable material layer so as to form a plurality of first patterns on the substrate, wherein the space between any two adjacent first patterns is more than the width of each first pattern; thirdly, carrying out first processing on the first patterns to crystallize the first patterns; fourthly, forming a second crystallizable material layer on the substrate, wherein the second crystallizable material layer covers the first patterns; and fifthly, patterning the second crystallizable material layer so as to form a plurality of second patterns on the substrate, wherein each second pattern is arranged between the first patterns.

Description

technical field [0001] The present invention relates to a process method, and in particular to a precision pattern process method. Background technique [0002] figure 1 It is a partial cross-sectional view of a liquid crystal display panel. Please refer to figure 1 The liquid crystal display panel 100 is, for example, a Fringe Field Switching (FFS) liquid crystal display panel, which at least includes a substrate 110 , a lower transparent conductive layer 120 , an insulating layer 130 and an upper transparent conductive layer 140 . The lower transparent conductive layer 120 is disposed on the substrate, the insulating layer 130 covers the lower transparent conductive layer 120 , and the upper transparent conductive layer 140 is disposed on the insulating layer 130 . [0003] exist figure 1 Among them, the line width of the upper transparent conductive layer 140 is W, and the line spacing is S. Generally speaking, finer line width W and line spacing S can obtain higher t...

AI Technical Summary

Problems solved by technology

However, the precision of exposure machines currently used in the panel industry is usually 3 μm. Taking the positive photoresist as an example, the line spacing S of the upper transparent conductive layer 140 can only reach 3 μm, which is the current limit

In other words, it is impossible to make the upper transparent conductive layer 140 with the line width W and the line spacing S less than 3 μm.

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