Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Formation method of semiconductor structure

A semiconductor and gas technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of semiconductor structure electrical performance and reliability to be improved, so as to improve reliability and electrical performance, improve appearance, prevent The effect of etching

Active Publication Date: 2019-03-12
SEMICON MFG INT (SHANGHAI) CORP
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the electrical performance and reliability of existing semiconductor structures formed by TSV technology need to be improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Formation method of semiconductor structure
  • Formation method of semiconductor structure
  • Formation method of semiconductor structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038]It can be seen from the background art that the electrical performance and reliability of the semiconductor structure formed by using the TSV technology in the prior art needs to be improved.

[0039] It has been found through research that the performance of the redistribution layer (RDL, Redistribution Layer) located at the bottom and sidewall surface of the TSV via hole is poor. It is not covered by the rewiring layer, which is an important reason for the poor electrical performance and reliability of the semiconductor structure.

[0040] Conduct research on the formation method of the semiconductor structure, the process steps of forming the semiconductor structure include:

[0041] Please refer to figure 1 , providing a substrate 100, forming a through hole 101 in the substrate 100; forming a metal layer 102 on the surface of the substrate 100, the bottom and the sidewall surface of the through hole 101; using a spin-on-coating process (spin-on-coating) to form an...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A formation method of a semiconductor structure comprises the following steps of providing a substrate, wherein a through hole is formed in the substrate; forming metal layers on a substrate surface, a through hole bottom and a sidewall surface; providing a lithography processing chamber, wherein pressure in the lithography processing chamber and pressure outside the lithography processing chamber possess a pressure difference, a pressure difference lithography technology is adopted in the lithography processing chamber, a photoresist layer is formed on a part of the metal layer surfaces, the photoresist layer closes the through hole and a gas is arranged in the through hole; taking the photoresist layer as a mask film, etching the metal layers till that a substrate surface is exposed and taking the residual metal layers as a redistribution layer; and removing the photoresist layer. By using the method of the invention, quality of the formed photoresist layer is increased; a thickness of the photoresist layer is avoided to be too thin or fracture is avoided; unnecessary etching to the metal layers of the through hole bottom and the sidewall surface is avoided too; quality of the formed redistribution layer is improved so that reliability and electric performance of the semiconductor structure are increased.

Description

technical field [0001] The invention relates to the technology in the field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] With the rapid development of semiconductor manufacturing technology, in order to achieve faster computing speed, larger data storage capacity and more functions of semiconductor devices, semiconductor chips are developing towards higher integration. The higher the integration degree of the semiconductor chip, the smaller the characteristic size (CD: Critical Dimension) of the semiconductor device. [0003] A three-dimensional integrated circuit (IC: Integrated Circuit) is manufactured by using advanced chip stacking technology, which is to stack chips with different functions into an integrated circuit with a three-dimensional structure. Compared with two-dimensional integrated circuits, the stacking technology of three-dimensional integrated circuits can not only shorten t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L21/027
Inventor 何作鹏丁敬秀
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com