Formation method of semiconductor structure

Abstract

A formation method of a semiconductor structure comprises the following steps of providing a substrate, wherein a through hole is formed in the substrate; forming metal layers on a substrate surface, a through hole bottom and a sidewall surface; providing a lithography processing chamber, wherein pressure in the lithography processing chamber and pressure outside the lithography processing chamber possess a pressure difference, a pressure difference lithography technology is adopted in the lithography processing chamber, a photoresist layer is formed on a part of the metal layer surfaces, the photoresist layer closes the through hole and a gas is arranged in the through hole; taking the photoresist layer as a mask film, etching the metal layers till that a substrate surface is exposed and taking the residual metal layers as a redistribution layer; and removing the photoresist layer. By using the method of the invention, quality of the formed photoresist layer is increased; a thickness of the photoresist layer is avoided to be too thin or fracture is avoided; unnecessary etching to the metal layers of the through hole bottom and the sidewall surface is avoided too; quality of the formed redistribution layer is improved so that reliability and electric performance of the semiconductor structure are increased.

Description

technical field [0001] The invention relates to the technology in the field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] With the rapid development of semiconductor manufacturing technology, in order to achieve faster computing speed, larger data storage capacity and more functions of semiconductor devices, semiconductor chips are developing towards higher integration. The higher the integration degree of the semiconductor chip, the smaller the characteristic size (CD: Critical Dimension) of the semiconductor device. [0003] A three-dimensional integrated circuit (IC: Integrated Circuit) is manufactured by using advanced chip stacking technology, which is to stack chips with different functions into an integrated circuit with a three-dimensional structure. Compared with two-dimensional integrated circuits, the stacking technology of three-dimensional integrated circuits can not only shorten t...

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Problems solved by technology

[0006] However, the electrical performance and reliability of existing semiconductor structures formed by TSV technology need to be improved

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