Charge pump circut
A charge pump and circuit technology, applied in the direction of conversion equipment without intermediate conversion to AC, can solve problems such as junction leakage, boost, and unfavorable charge pump efficiency, and achieve the effect of eliminating threshold voltage drop and substrate bias
Active Publication Date: 2013-06-12
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
Reverse biasing the transistor will increase its threshold voltage, and forward biasing will cause junction leakage, which are not conducive to the improvement of the efficiency of the charge pump
Method used
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[0015] An embodiment of the charge pump circuit of the present invention is as follows image 3 As shown, it includes a first PMOS transistor M1, a second PMOS transistor M2, a third PMOS transistor M3, a fourth NMOS transistor M4, a fifth PMOS transistor M5, a sixth PMOS transistor M6, a seventh PMOS transistor M7, and an eighth PMOS transistor M8, the ninth NMOS transistor M9, the tenth PMOS transistor M10, the eleventh PMOS transistor M11, the twelfth PMOS transistor M12, the first capacitor C1, and the second capacitor C2;
[0016] The source of the first PMOS transistor M1, the source of the second PMOS transistor M2, the gate of the third PMOS transistor M3, the gate of the fifth PMOS transistor M5, and the source of the ninth NMOS transistor M9 are connected to the first input signal VIN, and the first The substrate of the PMOS transistor M1, the substrate of the second PMOS transistor M2, the substrate of the third PMOS transistor M3, the drain of the second PMOS trans...
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The invention discloses a charge pump circuit, which comprises a first channel formed by four p-type metal oxide semiconductor (PMOS) transistors, one n-type mental oxide semiconductor (NMOS) transistor and one capacitor, and a second channel formed by four PMOS transistors, one NMOS transistor and one capacitor, wherein a first incoming signal and a second incoming signal are the input terminalsof the first channel and the second channel respectively, and a third incoming signal and a fourth incoming signal are the input terminals of two capacitors respectively, besides, another two PMOS transistors form an adaptive high-voltage selective circuit, the input terminals of the adaptive high-voltage selective circuit are the output terminals of the first channel and the second channel respectively, and the output terminal of the adaptive high-voltage selective circuit is the output terminal of the charge pump circuit. The charge pump circuit of the invention can eliminate transistor substrate biases and threshold value voltage drops.
Description
technical field [0001] The invention relates to a charge pump circuit. Background technique [0002] Such as figure 1 Shown is the schematic diagram of the Dickson charge pump circuit. N-type transistor M 0 The gate and drain are connected and connected to the input terminal, and the input terminal voltage is V IN , the source terminal is connected to the output terminal, and the output terminal voltage is V OUT , the substrate is grounded. Capacitance C 0 One end of it is connected to the output end, and the other end is connected to the control switch φ. Assuming that the control switch φ is grounded in the initial state, the input terminal voltage V IN pass N-type transistor through M 0 Capacitance C 0 charge to V OUT =V IN -V TN , V TN for M 0 The threshold voltage, at this time the N-type transistor M 0 cut-off, at this time the capacitor C 0 The amount of charge stored is Q1=(V IN -V TN )×C 0 . When the control switch φ is connected to the input ter...
Claims
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IPC IPC(8): H02M3/07
Inventor 金建明洪志良
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP