Method for removing film contaminants generated in the technological process and PECVD system

A process and pollutant technology, applied in metal material coating process, gaseous chemical plating, coating, etc., can solve problems such as corrosion, base metal damage, improper cleaning time control, etc., to reduce maintenance time and improve Yield and production efficiency, convenient and fast cleaning process

Inactive Publication Date: 2011-06-29
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if this method is used to remove the film pollutants attached to the inner wall of the process chamber and its internal parts, the chemical solution will have a certain corrosion effect on the parts attached to the film pollutants. If the cleaning time is not properly controlled, it will cause certain damage to the base metal. damage

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for removing film contaminants generated in the technological process and PECVD system
  • Method for removing film contaminants generated in the technological process and PECVD system
  • Method for removing film contaminants generated in the technological process and PECVD system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] In order for those skilled in the art to further understand the features and technical contents of the present invention, please refer to the following detailed description and accompanying drawings of the present invention. The accompanying drawings are provided for reference and illustration only, and are not intended to limit the present invention.

[0042] In the prior art, some specific chemical solutions are used to remove the film pollutants attached to the inner wall of the process chamber and its internal devices such as the gas distribution plate. During the removal process, the chemical solution will have a certain corrosion effect on the process chamber. If the cleaning time is not properly controlled , will cause some damage to the base metal, and it is necessary to disassemble the gas distribution plate and other components from the process chamber and then clean them separately. The efficiency is low and the cleaning time is long, which reduces the output t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a method for removing film contaminants generated in the technological process and a plasma enhanced chemical vapor deposition (PECVD) system. The method for removing the film contaminants generated in the technological process is applied to a plasma enhanced chemical vapor deposition system, and comprises the following step of: cooling a part to which the film contaminants are attached, so that the film contaminants attaching to the part are separated from the part, wherein cold shrinkage coefficients of the part and the film contaminants are different. The film contaminants attaching to the part are removed by a physical means, a chemical agent is not needed for corrosion, and the aim of cleaning the part in the PECVD system without damage is fulfilled; moreover, the part is not needed to be detached, the cleaning process is convenient and quick, the maintenance time is reduced and the yield and production efficiency are improved.

Description

technical field [0001] The invention relates to the technical field of instrument equipment maintenance, in particular to a method for removing film pollutants generated in a process and a PECVD system. Background technique [0002] CVD (Chemical Vapor Deposition, chemical vapor deposition) is a process of depositing a solid film on the surface of a substrate through a chemical reaction of gas mixing. PECVD (Plasma-enhanced Chemical Vapor Deposition, plasma-enhanced chemical vapor deposition) is a chemical reaction that uses the activity of plasma at a lower temperature. Therefore, the activity of the participating reactants is greatly improved. These highly reactive substances are easily adsorbed on the surface of the substrate at a lower temperature, and non-equilibrium chemical reaction deposition occurs to form a thin film. PEVCD is widely used because of its low substrate temperature, fast deposition rate, less pinholes, and less cracking. [0003] Such as figure 1 S...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/513C23C16/54
CPCC23C16/50C23C16/4401
Inventor 魏民
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap