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Method and system for detecting defect of material based on electron pair effect

A technology for electron pair effect and detection of materials, which is applied in the direction of material analysis using radiation

Inactive Publication Date: 2011-06-29
NUCTECH CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the ray source and the sample are separated, positrons need to be injected into the sample from the surface, and the range of positrons in the sample is very small, so this method can only analyze the surface ~mm thickness of the material

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  • Method and system for detecting defect of material based on electron pair effect
  • Method and system for detecting defect of material based on electron pair effect

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Embodiment Construction

[0010] figure 1 A schematic diagram of a preferred embodiment of the method and system of the present invention is shown. As shown in the figure, after the electrons of several MeV produced by the electron accelerator bombard the tungsten target, bremsstrahlung X-rays with an energy value lower than 7 MeV will be produced, and these X-rays will pass through the X-ray collimator (1) and shoot to The detected material is collimated for the second time through the X-ray collimator (2), and then irradiated to a certain local position of the detected material.

[0011] X-rays injected into the material to be tested can undergo various reactions with it, including photoelectric effect, Compton scattering, electron pair effect, Rayleigh scattering, etc. Positrons and negative electrons are generated when X-rays interact with the material to be detected. The generated positrons are decelerated and slowed down in the detected object. When there are certain defects in the material, th...

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Abstract

The invention discloses a method and a system for detecting the defect of a material based on an electron pair effect. The method comprises the following steps of: providing low-energy X-rays which can be subjected to the electron pair effect with the detected material; irradiating the detected material by using the low-energy X-rays to produce positive electrons in the detected material through the electron pair effect; measuring a gamma photon spectrum released due to annihilation of the positron electrons by using a gamma ray detector; and analyzing the gamma photon spectrum to judge whether the defect exists in the detected material or not. In the method, the internal defect of the detected material is detected by the positive electrons produced because the low-energy X-rays are subjected to the electron pair effect in the detected material, and the positive electrons are uniformly produced in the material, so microstructure information in the material can be uniformly brought out by 511keV gamma rays released after the annihilation of the positron electrons; in addition, the purchasing cost and using cost of the low-energy X-rays are lower, and the method and the system have a few protection requirements and are convenient to use on site.

Description

technical field [0001] The present invention generally relates to a technology for detecting material defects by using X-rays, and more specifically, relates to a method and a system for detecting material defects based on the electron pair effect. Background technique [0002] The application of positron analysis technique is more and more extensive. It is known that, as the antiparticle of negative electrons, positrons will have an annihilation effect with the former after they are produced, and the process of annihilation and its products are closely related to the properties of negative electrons in materials. By measuring the lifetime of the positron in the material, the angular correlation of the two gamma rays emitted after the annihilation of the positron with an expected energy of 511 keV, or the broadening of the full-energy peak of the 511 keV gamma ray (mainly) due to the momentum of the negative electron, it is possible to analyze the To study the structural pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N23/18
Inventor 康克军李元景杨祎罡李铁柱张勤俭张翼
Owner NUCTECH CO LTD
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