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Method for cleaning PETEOS deposition equipment

A technology of deposition equipment and reaction chamber, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve the problems of large amount of cleaning gas and excessive loss of equipment spare parts, so as to improve utilization rate, reduce consumption, and reduce cost effect

Active Publication Date: 2012-07-25
FOUNDER MICROELECTRONICS INT
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Problems solved by technology

[0006] The embodiment of the present invention provides a PETEOS deposition equipment cleaning method to solve the problem of excessive loss of equipment spare parts caused by the large amount of cleaning gas used in the existing cleaning process

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  • Method for cleaning PETEOS deposition equipment
  • Method for cleaning PETEOS deposition equipment
  • Method for cleaning PETEOS deposition equipment

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Embodiment Construction

[0018] A cleaning method for PETEOS deposition equipment provided by the present invention will be described in detail below in conjunction with the accompanying drawings.

[0019] The PETEOS deposition equipment cleaning method provided in the embodiment of the present invention is roughly the same as the cleaning steps of the existing PETEOS deposition equipment, the difference lies in the process parameters such as the amount of gas used and the reaction time during the cleaning process. The specific cleaning process is as follows:

[0020] S101. Continuously inject C into each reaction chamber in the PETEOS deposition equipment 2 f 6 and O 2 Until the gas in each reaction chamber reaches a stable state;

[0021] In this step S101, pass into C 2 f 6 The gas flow rate is 380-420scc, that is, 400scc fluctuates by 5%; O 2 The gas flow rate is 475~525scc, that is, 400scc fluctuates by 5%;

[0022] This step S101 is a step to prepare for the next step of close-distance cle...

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Abstract

The invention discloses a method for cleaning plasma enhanced tetraethoxysilane (PETEOS) deposition equipment, which comprises the following steps of: introducing C2F6 and O2 serving as cleaning gases into each reaction cavity of the PETEOS deposition equipment, applying radio frequency alternating current, and performing short-range cleaning and long-distance cleaning on each reaction cavity in turn, wherein the flow of the introduced C2F6 gas is 380 to 420scc, and the flow of the O2 gas is 475 to 525scc; and vacuumizing the gases in each reaction cavity. By the method for cleaning PETEOS deposition equipment, on the premise of guaranteeing the cleaning quality of the PETEOS equipment, the process gas consumption is reduced, the cost is reduced, the loss speed of spare parts in the reaction cavity is reduced, and normal production time of the equipment is prolonged.

Description

technical field [0001] The invention relates to the field of semiconductor device production, in particular to a method for cleaning PETEOS deposition equipment. Background technique [0002] The function of the plasma-enhanced tetraethyl silicate (PETEOS) deposition equipment is to deposit thin films on the surface of the wafer by means of chemical reactions. It is necessary to transfer the processed wafer out of the cavity, and then clean the cavity. [0003] The purpose of cleaning the chamber is mainly to remove the film deposited on the chamber wall and the surface of the spare parts during the PETEOS deposition process, so as to prevent the film layer from peeling off after a long time process and produce a large number of particles, which will cause particle growth in the next wafer during the process. In the PETEOS film layer, it affects the compactness of the film layer and the reliability of the product. [0004] At present, the cleaning process of the equipment ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00
Inventor 崔晓娟周华强徐锋彭亮熊炳辉
Owner FOUNDER MICROELECTRONICS INT
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