The present application relates to the technical field of
ozone compression, and in particular to a high-purity
ozone concentration process and device for cleaning and
etching of
semiconductor materials, which includes the following steps: gas compression: compressing the gas to form a pressurized initial gas;
adsorption separation: passing the pressurized initial gas into the
ozone concentration device, and balancing the concentration of the pressurized initial gas, setting two
layers of adsorbent to jointly adsorb ozone, and during adsorption, adjusting the relative positions of the two
layers of adsorbent, changing the gas flushing position, and forming a combination of fixed adsorption and flow adsorption;
desorption: separating ozone and compressing to form high-purity ozone concentrated gas; wherein the device includes: a
tower body, an adsorbent layer, an air inlet
pipe for
gas supply, an
exhaust pipe for exhaust, a sealing plate sliding in the air inlet
pipe for adjusting the air supply of the air inlet
pipe, a sliding mechanism for driving the sealing plate to slide, and an exhaust module for separating and desorbing ozone. The present application has the effect of reducing the
impact on the purity of the ozone concentrated gas.